Unlock instant, AI-driven research and patent intelligence for your innovation.

Method and Apparatus for Localized and Controlled Removal of Material from a Substrate

A local, substrate-based technology, applied in the field of material removal methods and devices, can solve the problems of increased complexity of high-aspect-ratio components, difficult-to-peel photosensitive materials, and encroachment

Active Publication Date: 2014-09-17
TAIWAN SEMICON MFG CO LTD
View PDF5 Cites 3 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Currently used processes such as applying lift-off by spray / spin coating methods and / or batch methods are not adequate in some methods
For example, as semiconductor processes evolve to smaller critical dimensions and device dimensions decrease and the complexity of high-aspect-ratio features increases, it becomes difficult to strip all residues of photosensitive materials from such high-aspect-ratio features
As another example, the stripping solution contacts every part of the substrate during normal processing and thus can cause attack or damage to other components disposed on the substrate

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Method and Apparatus for Localized and Controlled Removal of Material from a Substrate
  • Method and Apparatus for Localized and Controlled Removal of Material from a Substrate
  • Method and Apparatus for Localized and Controlled Removal of Material from a Substrate

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0033] It should be understood that the following disclosure provides many different embodiments, or examples, for implementing different features of the invention. Specific examples of components and arrangements are described below to simplify the present disclosure. Of course, these are examples only and are not intended to limit the invention. In addition, in the following description, forming a first component over or on a second component may include an embodiment in which the first component and the second component are formed in direct contact, and may also include an embodiment in which the first component and the second component may be formed An embodiment in which an additional part is formed therebetween so that the first part and the second part may not be in direct contact. Various features may be arbitrarily drawn in different scales for simplicity and clarity.

[0034] figure 1 A flow diagram of a method 100 of removing material from a substrate is shown. ...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

A method and a system that include providing a localized dispensing apparatus. A substrate having a material disposed on its top surface is oriented above the localized dispensing apparatus. A chemical is then dispensed from the localized dispensing apparatus onto the top surface of the oriented substrate. The chemical removes the material. The path for the material removal may be determined and the localized dispensing apparatus programmed to provide chemical according to the path.

Description

[0001] Cross References to Related Applications [0002] This application claims priority to U.S. Provisional Patent Application No. 61 / 781,710, entitled "Method and apparatus For Localized And Controlled Removal Of Material Form A Substrate," filed March 14, 2013, the entire contents of which are hereby incorporated by reference . technical field [0003] The present invention generally relates to the field of semiconductor technology, and more particularly, to a material removal method and apparatus. Background technique [0004] The semiconductor integrated circuit (IC) industry has experienced rapid development. In the course of IC evolution, functional density (ie, the number of interconnected devices per chip area) typically increases while geometry size (ie, the smallest component (or line) that can be made using a fabrication process) decreases. This scaling down process offers advantages by increasing production efficiency and reducing associated costs. However, ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/027
CPCH01L21/30604H01L21/6708G03F7/42H01L21/02052H01L21/02057
Inventor 黄晖闵林志伟陈正庭郑明达刘重希
Owner TAIWAN SEMICON MFG CO LTD