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XPS analysis method and system for studying the interaction between plasma and material surface

A plasma and analysis system technology, which is applied in the direction of material analysis, analysis materials, and measurement devices using wave/particle radiation, can solve the problems of low analysis accuracy and poor reliability, and achieve the effect of improving accuracy and reliability

Inactive Publication Date: 2017-04-12
TSINGHUA UNIV
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0005] For this reason, the present invention provides an XPS analysis system for studying the interaction between plasma and material surface, which can solve the problems of low analysis accuracy and poor reliability.

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  • XPS analysis method and system for studying the interaction between plasma and material surface
  • XPS analysis method and system for studying the interaction between plasma and material surface
  • XPS analysis method and system for studying the interaction between plasma and material surface

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Embodiment Construction

[0024] Embodiments of the present invention are described in detail below, and examples of the embodiments are shown in the drawings, wherein the same or similar reference numerals denote the same or similar elements or elements having the same or similar functions throughout. The embodiments described below by referring to the figures are exemplary only for explaining the present invention and should not be construed as limiting the present invention.

[0025] In describing the present invention, it should be understood that the terms "center", "longitudinal", "transverse", "upper", "lower", "front", "rear", "left", "right", " The orientations or positional relationships indicated by "vertical", "horizontal", "top", "bottom", "inner" and "outer" are based on the orientations or positional relationships shown in the drawings, and are only for the convenience of describing the present invention and Simplified descriptions, rather than indicating or implying that the device or e...

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Abstract

The invention proposes X-ray photoelectron spectroscopy (XPS) analysis method and system for researching interaction of plasma and a material surface. The system comprises a loading interlock cavity, a plasma discharge cavity and an analysis cavity, wherein the loading interlock cavity is used for conveying a sample to the plasma discharge cavity or the analysis cavity; the plasma discharge cavity is connected with the loading interlock cavity and used for carrying out plasma discharge treatment on the sample surface; the analysis cavity is connected with the plasma discharge cavity and used for carrying out surface analysis on the processed sample. According to the analysis system disclosed by the embodiment of the invention, the sample enters the analysis cavity to be analyzed in a high-vacuum state by virtue of the loading interlock cavity and the plasma discharge cavity. Thus, the accuracy and the reliability of the analysis result are improved.

Description

technical field [0001] The invention relates to the field of plasma technology, in particular to an XPS analysis method and system for studying the interaction between plasma and material surfaces. Background technique [0002] The XPS analysis system of plasma plays an important role in the semiconductor industry. Through the XPS analysis system, the mechanism and process of etching can be understood, so it is of great significance to improve the etching process. [0003] In the existing analysis methods, the vacuum state of the surface contacted by the plasma is in conflict with the ultra-high vacuum state required by XPS surface analysis, so it is difficult to analyze the chemical substances on the surface contacted by the plasma. In addition, the current commercial XPS analysis equipment will inevitably let it contact with the air before analyzing the chemical substances on the surface contacted by the plasma, thereby changing the properties of the chemical substances, w...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G01N23/227
Inventor 李江涛王振斌蒲以康
Owner TSINGHUA UNIV