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Integrated inductor structure and method for manufacturing integrated inductor structure

A technology of integrated inductance and manufacturing method, which is applied in the field of integrated inductance structure manufacturing, can solve the problems of inability to effectively reduce electromagnetic eddy current, poor electromagnetic eddy current blocking effect, etc., achieve complete blocking effect and improve quality factor effect

Active Publication Date: 2018-02-06
REALTEK SEMICON CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

like figure 1 As shown, the patterned ground guard 22 is formed between the inductor 30 and the gate oxide layer 24. However, such a patterned ground guard 22 has a poor blocking effect on the electromagnetic eddy current formed in the deep layer of the semiconductor substrate 10, and figure 1 The material of the patterned grounding protection 22 is polysilicon, which cannot effectively reduce the electromagnetic eddy current

Method used

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  • Integrated inductor structure and method for manufacturing integrated inductor structure
  • Integrated inductor structure and method for manufacturing integrated inductor structure
  • Integrated inductor structure and method for manufacturing integrated inductor structure

Examples

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no. 1 example

[0066] Please refer to Figure 4 , Figure 4 What is shown is a flowchart of a first embodiment of the method for manufacturing an integrated inductor structure of the present invention based on the aforementioned integrated inductor structure 200. If substantially the same result can be obtained, the steps in the process do not necessarily need to be followed. Figure 4 The sequence shown does not necessarily need to be sequential, that is, other steps may be inserted between these steps. The first embodiment of the method for manufacturing an integrated inductor structure of the present invention includes the following steps:

[0067] Step 400: Form a semiconductor substrate.

[0068] Step 402: Form a plurality of deep trenches in the semiconductor substrate, and arrange the plurality of deep trenches into a specific pattern.

[0069] Step 404 : Fill a metal material in the plurality of deep trenches to form a patterned ground shield.

[0070] Step 406 : Form an inductor...

no. 4 example

[0081] Please refer to Figure 13 , Figure 13 What is shown is a flowchart of a fourth embodiment of the method for manufacturing an integrated inductor structure of the present invention based on the above-mentioned integrated inductor structure 700. If substantially the same result can be obtained, the steps in the process do not necessarily need to be followed. Figure 13 The sequence shown does not necessarily need to be sequential, that is, other steps may be inserted between these steps. The fourth embodiment of the integrated inductor structure manufacturing method of the present invention includes the following steps:

[0082] Step 800: Form a semiconductor substrate.

[0083] Step 802: Form an inductor over the semiconductor substrate.

[0084] Step 804 : Form a redistributed metal layer with a specific pattern on the inductor to form a patterned ground shield.

[0085] Please note that the above-mentioned embodiments are only used as illustrations of the present...

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Abstract

The invention discloses an integrated inductor structure and a manufacturing method thereof. The integrated inductor structure comprises a semiconductor substrate, an inductor and a redistribution layer, wherein the inductor is formed above the semiconductor substrate; and the redistribution layer is formed above the inductor and has a special pattern to form a patterned ground shield. The invention further discloses the manufacturing method of the integrated inductor structure. The manufacturing method of the integrated inductor structure comprises the steps of forming the semiconductor substrate, forming the inductor above the semiconductor substrate, and forming the redistribution layer with the special pattern above the inductor to form the patterned ground shield.

Description

technical field [0001] The present invention relates to an integrated inductance structure and a method for manufacturing the integrated inductance structure, in particular to an integrated inductance structure with an innovative patterned ground shield (Patterned Ground Shield, PGS) and a method for manufacturing the integrated inductance structure . Background technique [0002] With the development of IC manufacturing towards system-on-a-chip (SoC), passive components such as integrated inductors have been widely integrated into high-frequency integrated circuits. Since IC manufacturing generally uses a silicon substrate structure, integrated inductors have a low quality factor (Q-factor) problem due to substrate loss. [0003] Therefore, it has been proposed to use a patterned ground shield (PGS) made of polysilicon (polysilicon) metal to reduce the electromagnetic eddy current (eddy current) of the integrated inductor, so as to improve the quality factor. For example, ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L23/64H01L23/58H01L21/02
CPCH01L2224/16225
Inventor 叶达勋
Owner REALTEK SEMICON CORP
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