Internal plasma grid applications for semiconductor fabrication

A plasma and ion technology, applied in the field of plasma grids, can solve problems such as difficult to achieve multiple purposes

Active Publication Date: 2014-10-15
LAM RES CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0008] Multiple objectives such as those articulated above have been found to be difficult to achieve when etching advanced structures such as FinFET gates

Method used

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  • Internal plasma grid applications for semiconductor fabrication
  • Internal plasma grid applications for semiconductor fabrication
  • Internal plasma grid applications for semiconductor fabrication

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Embodiment Construction

[0043] In this specification, the terms "semiconductor wafer," "wafer," "substrate," "wafer substrate," and "partially fabricated integrated circuit" are used interchangeably. It will be understood by those of ordinary skill in the art that the term "partially fabricated integrated circuit" may refer to devices on a semiconductor wafer during any of the different stages of integrated circuit fabrication on the semiconductor wafer. The following detailed description assumes that the present invention is implemented on a wafer. However, the present invention is not limited thereto. Workpieces can be formed in a variety of shapes, sizes and materials.

[0044] In the following description, numerous specific details are set forth in order to provide a thorough understanding of the present invention. However, the present invention may be practiced without some or all of these specific details. In other instances, well known process operations have not been described in detail in...

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Abstract

The embodiments disclosed herein pertain to improved methods and apparatus for etching a semiconductor substrate. A plasma grid assembly is positioned in a reaction chamber to divide the chamber into upper and lower sub-chambers. The plasma grid assembly may include one or more plasma grids having slots of a particular aspect ratio, which allow certain species to pass through from the upper sub-chamber to the lower sub-chamber. In some cases, an electron-ion plasma is generated in the upper sub-chamber. Electrons that make it through the grid to the lower sub-chamber are cooled as they pass through. In some cases, this results in an ion-ion plasma in the lower sub-chamber. The ion-ion plasma may be used to advantage in a variety of etching processes.

Description

[0001] Cross References to Related Applications [0002] This application claims priority to U.S. Patent Application No. 14 / 184,491, filed Feb. 19, 2014, entitled "INTERNAL PLASMA GRID APPLICATION FOR SEMICONDUCTOR FABRICATION," filed on Nov. 2013 Continuation-in-Part of, and claiming priority to, U.S. Patent Application No. 14 / 082,009, entitled "INTERNAL PLASMA GRID FOR SEMICONDUCTOR FABRICATION," filed on April 15, 2013. Priority to U.S. Provisional Application No. 61 / 809,246, entitled "INTERNAL PLASMA GRID FOR SEMICONDUCTOR FABRICATION," filed on , all of which are hereby incorporated by reference in their entirety for all purposes. technical field [0003] The present invention relates generally to the field of semiconductor manufacturing, and more particularly to internal plasma grids for semiconductor manufacturing. Background technique [0004] One operation frequently employed in semiconductor production is an etching operation. In an etching operation, one or more...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/3065H01J37/32
CPCH01L21/32137H01L21/28123H01L21/3065H01L21/0273H01J37/321H01J37/32422H01J37/32H01L21/31138H01L21/76224H01L29/66795
Inventor 亚历克斯·帕特森金都永高里·卡马尔斯埃莱娜·德尔普波尤仁刊莫妮卡·泰特斯拉迪卡·马尼诺埃尔·尤伊·苏恩尼古拉斯·加尼木村吉江钟廷英
Owner LAM RES CORP
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