Light emitting diode device and manufacturing method thereof
A technology for light-emitting diodes and a manufacturing method, which is applied to electrical components, electrical solid-state devices, circuits, etc., can solve problems such as inability to effectively discharge heat and damage to light-emitting diode chips, and achieve improved driving current, improved heat dissipation efficiency, and improved light output efficiency. Effect
Active Publication Date: 2017-04-12
EVERLIGHT ELECTRONICS
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Problems solved by technology
Therefore, if the heat generated by the light-emitting active layer of the light-emitting diode chip cannot be effectively discharged, especially when driven by high current, the light-emitting diode chip is often easily damaged due to overheating.
Method used
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Embodiment Construction
[0043] Figure 1A to Figure 1H It is a schematic cross-sectional view of the manufacturing process of a light emitting diode device according to an embodiment of the present invention. The manufacturing method of the light-emitting diode device of this embodiment includes the following steps: first, provide such as Figure 1A The LED chip structure shown includes a substrate 110 , a first LED 120 , a second LED 130 and a wiring layer 150 . In this embodiment, the substrate 110 may be a growth substrate for semiconductor growth, such as a sapphire substrate. The first light emitting diode 120 is disposed on a surface 112 of the substrate 110 and includes a first electrode 128 and a first light emitting layer 124 , wherein the first light emitting layer 124 defines a first light emitting region. In detail, the first light-emitting diode 120 includes a first semiconductor layer 122, a first light-emitting layer 124 and a second semiconductor layer 126 stacked in sequence from th...
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The invention provides a light-emitting diode device comprising a substrate, a first light-emitting diode, a second light-emitting diode, an insulating layer, a wire layer, a reflecting layer, a first pad, and a second pad. The first light-emitting diode is disposed on the substrate and comprises a first electrode and a first light-emitting area. The second light-emitting diode is disposed on the substrate and is spaced apart from the first light-emitting diode by a gap. The second light-emitting diode comprises a second electrode and a second light-emitting area. The wire layer is electrically connected with the first light-emitting diode and the second light-emitting diode. The reflecting layer is arranged between the first light-emitting area and the first pad and between the second light-emitting area and the second pad. The insulating layer is filled in the gap and is arranged between the wire layer and the reflecting layer. The insulating layer contacts the first light-emitting diode and the second light-emitting diode. The first pad is disposed on the first electrode and the second pad is disposed on the second electrode.
Description
technical field [0001] The present invention relates to a light-emitting diode device and its manufacturing method, and in particular to a high-voltage light-emitting diode device and its manufacturing method. Background technique [0002] Light-emitting diodes have advantages such as long life, small size, high shock resistance, low heat generation, and low power consumption, so they have been widely used as indicators or light sources in households and various equipment. In recent years, due to the continuous improvement of the luminous efficiency of light-emitting diodes, light-emitting diodes have gradually replaced fluorescent lamps and incandescent bulbs in some fields, such as scanner light sources that require high-speed response, backlights for liquid crystal displays, or dashboard lighting for front lights. , traffic lights, and general lighting installations. The light-emitting principle of light-emitting diodes is to convert electrical energy into light, that is...
Claims
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IPC IPC(8): H01L33/62H01L27/15
CPCH01L27/15H01L33/46H01L33/62H01L33/647
Inventor 叶寅夫林治民康桀侑
Owner EVERLIGHT ELECTRONICS