Semiconductor device with isolated body portion

Abstract

Semiconductor devices with isolated body portions are described. For example, a semiconductor structure includes a semiconductor body disposed above a semiconductor substrate. The semiconductor body includes a channel region and a pair of source and drain regions on either side of the channel region. An isolation pedestal is disposed between the semiconductor body and the semiconductor substrate. A gate electrode stack at least partially surrounds a portion of the channel region of the semiconductor body.

Description

technical field [0001] Embodiments of the invention are in the field of semiconductor devices, and in particular, in the field of semiconductor devices having isolated body portions. Background technique [0002] Over the past few decades, the scaling of features in integrated circuits has been the driving force behind the growing semiconductor industry. Scaling to smaller and smaller features enables increasing the density of functional units on the limited real estate of a semiconductor chip. For example, shrinking transistor size allows the number of memory devices included on a chip to increase, resulting in products with greater capacity. However, the quest for greater and greater capacity is not without its problems. The need to optimize the performance of each device has become increasingly apparent. [0003] In the fabrication of integrated circuit devices, multi-gate transistors, such as tri-gate transistors, have become more common as device dimensions continue ...

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Problems solved by technology

Alternatively, if the metal gate electrode is deeper than the source and drain extension tips, the result may be undesired gate capacitance parasitic effects (capparasitic)

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