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Combined lower heat insulation screen for sapphire single crystal furnace

A sapphire single crystal furnace, heat insulation technology, applied in the direction of single crystal growth, single crystal growth, crystal growth, etc., to achieve the effect of ensuring stable furnace temperature, improving heat preservation performance and temperature uniformity, and prolonging service life

Active Publication Date: 2016-08-31
NANJING CRYSTAL GROWTH & ENERGY EQUIP CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] At present, three materials with different characteristics, tungsten sheet, zirconia plate and molybdenum screen, are connected in combination in the thermal insulation screen under the sapphire single crystal furnace, so as to improve the reliability of the thermal insulation layer, improve the thermal insulation performance, and extend the The design of the service life has not been reported

Method used

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  • Combined lower heat insulation screen for sapphire single crystal furnace
  • Combined lower heat insulation screen for sapphire single crystal furnace
  • Combined lower heat insulation screen for sapphire single crystal furnace

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Embodiment Construction

[0019] The accompanying drawings disclose the specific structure of an embodiment of the present invention in a non-limiting manner. This embodiment of the present invention will be further described below in conjunction with the accompanying drawings.

[0020] by figure 1 with figure 2 It can be seen that the thermal insulation screen of the present invention is assembled from top to bottom, which is a combination of tungsten screen 1, zirconia plate 3, and molybdenum screen 2, in which:

[0021] The tungsten screen 1 includes upper and lower circular thin tungsten sheets 10, a contour tungsten spacer ring 9 and a tungsten card 8, which are matched with the furnace. The contour tungsten spacer rings 9 are evenly distributed on the ring surface between the upper and lower circular thin tungsten sheets. After the card 8 passes through the upper circular thin tungsten sheet 10, the equal height tungsten spacer ring 9, and the lower circular thin tungsten sheet 10, the upper and lower...

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Abstract

The invention relates to a combined lower thermal insulation screen for a sapphire single crystal furnace. The upper and lower circular thin tungsten sheets and the equal-height tungsten spacers and tungsten clips, the equal-height tungsten spacers are distributed between the upper and lower circular thin tungsten sheets, and the tungsten cards pass through the upper and lower circular thin tungsten sheets and the equal-height tungsten spacers. The upper and lower ends are bent in two opposite directions to be close to the circular thin tungsten sheet; the zirconia plate is a round cake-shaped zirconia plate that matches the furnace; the upper part of the molybdenum screen is a transitional molybdenum screen, and the lower part is a base molybdenum screen. It contains at least three circular thin molybdenum sheets, and there are equal-height molybdenum spacers between each circular thin molybdenum sheet. Shaped thin molybdenum sheet, the bottom circular thin molybdenum sheet supports the molybdenum screen through the bent tungsten wire; the tungsten stud passes through the tungsten screen, the zirconia plate and the molybdenum screen, and the molybdenum nut fixes them into one.

Description

Technical field [0001] The invention relates to an internal thermal insulation screen for a high-temperature furnace, in particular to a combined lower thermal insulation screen for a sapphire single crystal furnace that can meet the good thermal insulation performance required for sapphire single crystal growth. Background technique [0002] Sapphire single crystal furnace is an important crystal growth equipment in the LED industry. The heat insulation layer is the heat insulation device in the sapphire single crystal furnace to ensure the temperature uniformity of the thermal field in the furnace and improve the utilization rate of heat energy. Since sapphire single crystals must be grown slowly under high temperature (about 2050°C) conditions, the uniformity and heat preservation performance of the thermal field in the furnace under high temperature conditions directly determine the quality of crystal growth, so the design and application of sapphire single crystal furnaces ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C30B29/20C30B35/00
Inventor 李辉李占贤毛瑞川姜宏伟吴春生
Owner NANJING CRYSTAL GROWTH & ENERGY EQUIP CO LTD