A low parasitic inductance gan power integrated module with split capacitor middle layout

Abstract

The present invention provides a GaN power integrated module with low parasitic inductance in the middle layout of split capacitors, including an upper bridge arm device, a lower bridge arm device, and a bus capacitor. The upper bridge arm device and the lower bridge arm device are GaN devices packaged in LGA, and the bus bar capacitor It is a chip package. Two GaN devices are placed side by side, and multiple bus capacitors are placed between the two GaN devices. Each source pin of the high-bridge device is directly connected to a drain of the low-bridge device, and each drain of the high-bridge device and a source of the low-bridge device are respectively connected to two bus capacitors. electrode. The layout mode adopted by the present invention can effectively reduce the area of ​​the high-frequency power loop, and at the same time fully utilize the structure of the staggered arrangement of the drain and source pins of the LGA package to form a plurality of interleaved parallel high-frequency power current loops, thereby The parasitic inductance of the high-frequency power loop is significantly reduced, and the overvoltage and oscillation during the switching process are reduced.

Description

technical field [0001] The invention belongs to the technical field of power electronics, and in particular relates to a low parasitic inductance GaN power integration module arranged in the middle of split capacitors. Background technique [0002] GaN power devices are popular new material devices that have appeared in recent years and have been gradually commercialized. Compared with Si devices, they have superior on-state characteristics and very good switching characteristics, so they have attracted the attention of the industry in a relatively short period of time. , Scholars engaged in applied research have also carried out a lot of research work, applying it to low-voltage, low-power power supply devices such as POL and DC / DC. Studies have shown that replacing Si devices with GaN devices can greatly increase the switching frequency while maintaining good efficiency indicators. Undoubtedly, in low-voltage and low-power applications, GaN devices will be more and more w...

AI Technical Summary

Problems solved by technology

However, the aluminum oxide substrate can only be wired in a single layer or double layer, and the thickness of the substrate is relatively large, which brings great challenges to the wiring

On the alumina substrate, the power loop inductance of the optimal wiring structure is about 1.2nH, which will bring serious voltage spikes and oscillations to the circuit

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