A kind of inner and outer double-electrode micro-hemispherical resonant gyroscope and its preparation method
A technology of hemispherical resonant gyroscope and hemispherical resonator, which is used in gyroscope/steering sensing equipment, gyroscopic effect for speed measurement, instruments, etc., can solve the problem of unfavorable signal application and signal extraction, no design of leads and wire pads, limited detection Accuracy and other issues, to achieve the effect of facilitating signal application and signal extraction, increasing the number of electrodes, and improving detection accuracy
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Embodiment 1
[0051] Such as Figure 2(a)-Figure 2(c) As shown, the present embodiment provides a kind of internal and external dual-electrode miniature hemispherical resonant gyroscope, comprising:
[0052] a single crystal silicon substrate 1;
[0053] a central fixed support column 2;
[0054] A miniature hemispherical harmonic oscillator 3;
[0055] Eight uniformly distributed external electrodes 4;
[0056] Eight external electrode metal welding plates 5;
[0057] a glass substrate 6;
[0058] Sixteen metal leads 7;
[0059] Sixteen round wire reels 8;
[0060] Eight external electrode metal connection columns 9;
[0061] Eight evenly distributed internal electrodes 10;
[0062] a seed layer 11;
[0063] Wherein: one end of the central fixed support column 2 is connected to the single crystal silicon substrate 1, and the other end is connected to the micro hemispherical resonator 3; the external electrode 4 is arranged on the lower surface of the single crystal silicon substra...
Embodiment 2
[0080] Such as Figure 1(a)-Figure 1(k) As shown, the present embodiment provides a method for preparing an internal and external dual-electrode miniature hemispherical resonant gyroscope, including the following steps:
[0081] The first step, as shown in Figure 1(a), is to perform cleaning, glue coating, photolithography, development, boron ion implantation, sputtering, and glue removal processes on the single crystal silicon substrate to obtain a thickness on the single crystal silicon substrate 1. An external electrode 4 made of boron ion-doped silicon material with a thickness of 10 μm-50 μm and an external electrode metal welding plate 5 made of chromium and copper materials with a thickness of 50 nm-300 nm;
[0082] The second step, as shown in Figure 1(b), is based on the first step of glue coating, photolithography, development, silicon isotropic etching, and glue removal to obtain a radius on the single crystal silicon substrate 1. 300μm-700μm hemispherical groove; ...
Embodiment 3
[0094] Basically the same as embodiment 1 and embodiment 2, the difference is:
[0095] As shown in Fig. 3(a) and Fig. 3(b), the micro gyroscope prepared in this embodiment: the internal electrode 10 is a ring-shaped integrated electrode.
[0096] In this embodiment, the inner electrode 10 in the micro gyroscope can only provide a single control signal, and cannot apply a driving signal and extract a detection signal.
[0097] In this embodiment, the micro gyroscope can apply a ring control signal to the inner electrode 10, so that the micro gyroscope can work in the full-angle mode and directly detect the magnitude of the applied rotation angle.
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