Cell charging circuit and device
A battery charging and circuit technology, which is applied in the field of circuits, can solve problems such as inability to charge batteries, complex circuit structure, unfavorable energy saving, environmental protection, and cost saving, and achieve the effects of energy saving, cost saving, and simple structure
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Embodiment 1
[0042] image 3 The circuit structure of the battery charging circuit provided by the first embodiment of the present invention is shown, and for the convenience of description, only the parts related to the first embodiment are listed.
[0043] As an embodiment of the present invention, the first switch tube 1011 adopts a PNP transistor Q1, the base of the PNP transistor Q1 is the control terminal of the first switch tube 1011, and the collector of the PNP transistor Q1 is the high potential of the first switch tube 1011 terminal, the emitter of the PNP transistor Q1 is the low potential terminal of the first switch tube 1011;
[0044] The second switch tube 1012 adopts an NPN transistor Q2, the base of the NPN transistor Q2 is the control terminal of the second switch tube 1012, the collector of the NPN transistor Q2 is the high potential end of the second switch tube 1012, and the NPN transistor Q2 The emitter is a low potential end of the second switch tube 1012 .
[004...
Embodiment 2
[0052] Figure 4 The circuit structure of the battery charging circuit provided by the second embodiment of the present invention is shown, and for the convenience of description, only the parts related to the second embodiment are listed.
[0053] As an embodiment of the present invention, the first switch tube 1011 uses a P-type MOS tube Q5, the gate of the P-type MOS tube Q5 is the control terminal of the first switch tube 1011, and the drain of the P-type MOS tube Q5 is the gate of the first switch tube 1011. The high potential end, the source of the P-type MOS transistor Q5 is the low potential end of the first switch tube 1011;
[0054] The second switch tube 1012 uses an N-type MOS tube Q6, the gate of the N-type MOS tube Q6 is the control terminal of the second switch tube 1012, and the drain of the N-type MOS tube Q6 is the high potential end of the second switch tube 1012. The source of the transistor Q6 is the low potential end of the second switch transistor 1012 ...
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