Method and inspection system for inspecting masks to identify lithographically significant defects

An inspection system and mask technology, applied in the field of mask inspection, can solve the problems of complex and different mask patterns

Active Publication Date: 2019-08-09
KLA CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, OPC makes the mask pattern even more complex and often very different from the resulting wafer image
Also, OPC defects usually do not translate into printable defects

Method used

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  • Method and inspection system for inspecting masks to identify lithographically significant defects
  • Method and inspection system for inspecting masks to identify lithographically significant defects
  • Method and inspection system for inspecting masks to identify lithographically significant defects

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[0063] Figure 6A is a simplified schematic representation of a typical photolithography system 600 that may be used to transfer a mask pattern from a photomask M onto a wafer W, according to certain embodiments. Examples of such systems include scanners and steppers, more particularly the PAS 5500 system available from ASML, Veldhofen, The Netherlands. In general, an illumination source 603 directs a beam of light onto a photomask M located in a mask plane 602 via an illumination lens 605 . The illumination lens 605 has a numerical aperture 601 at a plane 602 . The value of numerical aperture 601 affects which defects on the photomask are lithographically significant and which are not. A portion of the light beam passing through photomask M forms a patterned optical signal that is directed through imaging optics 653 and onto wafer W to initiate pattern transfer.

[0064] Figure 6B A schematic representation of an inspection system 650 having an imaging lens 651a having a...

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Abstract

The invention discloses a detection method for thin line detection based on point images. The method includes steps for generating a band-limited point image from a transmitted optical image and a reflected optical image of a mask. The spot image is calibrated to minimize a number of optical aberrations from the spot image. Restoring the point image back to a mask image to allow at least one of: a more reliable segmentation between thin-line and non-thin-line regions on the mask image, or to facilitate segmentation More accurate line width measurement. Thin line features are distinguished from non-thin line features on the reduced mask image. Regions containing thin line features are grown while preventing said thin line growth from encroaching on said non-fine line features.

Description

[0001] Related Application Cross Reference [0002] This application claims the benefit of the following prior applications: (i) Wang Zhengyu et al., entitled "IMPROVED DETECTION OF THINLINE FOR IMPROVED DETECTION OF THINLINE FOR SELECTIVE SENSITIVITY DURING RETICLE INSPECTION USING PROCESSEDIMAGES)", U.S. Provisional Application No. 61 / 608,268, filed March 8, 2012, (ii) Wang Zhengyu et al., entitled "Using Processed Images During Reticle Inspection for Thin line detection of selective sensitivity (DETECTION OFTHIN LINES FOR SELECTIVE SENSITIVITY DURING RETICLE INSPECTION USING PROCESSED IMAGES)", No. 61 / 609,359 U.S. provisional application filed on March 11, 2012, and (iii) Wang Zhengyu et al. Application No. 61 / 2012, filed March 12, 2012, entitled "DETECTION OF THIN LINES FOR SELECTIVE SENSITIVITY DURING RETICLE INSPECTION USING PROCESSED IMAGES" US Provisional Application No. 609,903, which is hereby incorporated by reference in its entirety for all purposes. technical fi...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G03F1/84G06K9/64
CPCG06T7/13G06T7/174G03F1/84G06T7/001G01N2021/95676G06T2207/10152G06T2207/20044G06T2207/10016G06T2207/20221G06T2207/20161G06T2207/30148
Inventor 王征宇石瑞芳利赫-华·尹李冰
Owner KLA CORP
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