Detection of thin lines for selective sensitivity during reticle inspection using processed images

A thin line, dot image technology, applied in the field of photomask inspection, can solve the problems of different and complex mask patterns, etc.

Active Publication Date: 2015-01-07
KLA TENCOR TECH CORP
View PDF6 Cites 8 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, OPC makes the mask pattern even more complex and often very different from the

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Detection of thin lines for selective sensitivity during reticle inspection using processed images
  • Detection of thin lines for selective sensitivity during reticle inspection using processed images
  • Detection of thin lines for selective sensitivity during reticle inspection using processed images

Examples

Experimental program
Comparison scheme
Effect test

example

[0063] Figure 6A is a simplified schematic representation of a typical photolithography system 600 that may be used to transfer a mask pattern from a photomask M onto a wafer W, according to certain embodiments. Examples of such systems include scanners and steppers, more particularly the PAS 5500 system available from ASML, Veldhofen, The Netherlands. In general, an illumination source 603 directs a beam of light onto a photomask M located in a mask plane 602 via an illumination lens 605 . The illumination lens 605 has a numerical aperture 601 at a plane 602 . The value of numerical aperture 601 affects which defects on the photomask are lithographically significant and which are not. A portion of the light beam passing through photomask M forms a patterned optical signal that is directed through imaging optics 653 and onto wafer W to initiate pattern transfer.

[0064] Figure 6B A schematic representation of an inspection system 650 having an imaging lens 651a having a...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

A detection method for a spot image based thin line detection is disclosed. The method includes a step for constructing a band limited spot image from a transmitted and reflected optical image of the mask. The spot image is calibrated to reduce noise introduced by the one or more inspection systems. Based on the band limited spot image, a non-printable feature map is generated for the non-printable features and a printable feature map is generated for the printable features. One or more test images of the mask are analyzed to detect defects on such mask. A sensitivity level of defect detection is reduced in areas of the one or more test images defined by the non-printable feature map, as compared with areas of the one or more test images that are not defined by the non-printable features map

Description

[0001] Related Application Cross Reference [0002] This application claims the benefit of the following prior applications: (i) Wang Zhengyu et al., entitled "IMPROVED DETECTION OF THIN LINE USING PROCESSED IMAGES DURING RETICLE INSPECTION FOR SELECTIVE SENSITIVITY DURING RETICLE INSPECTION USING PROCESSED IMAGES)", U.S. Provisional Application No. 61 / 608,268, filed March 8, 2012, (ii) Wang Zhengyu et al., entitled "Using Processed Images During Reticle Inspection U.S. Provisional Application No. 61 / 609,359, filed March 11, 2012, for DETECTION OF THIN LINES FOR SELECTIVE SENSITIVITY DURING RETICLE INSPECTION USING PROCESSED IMAGES, and (iii) March 12, 2012, titled "DETECTION OF THIN LINES FOR SELECTIVE SENSITIVITY DURING RETICLE INSPECTION USING PROCESSED IMAGES" by Wang Zhengyu et al. Application No. 61 / 609,903, which is hereby incorporated by reference in its entirety for all purposes. technical field [0003] The present invention relates generally to the field of photo...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
IPC IPC(8): G03F1/84G06K9/64
CPCG06T2207/10016G06T2207/20044G01N2021/95676G06T2207/20161G06T7/0097G06T2207/20221G06T7/0085G06T2207/10152G06T7/001G03F1/84G06T2207/30148G06T7/13G06T7/174
Inventor 王征宇石瑞芳利赫-华·尹李冰
Owner KLA TENCOR TECH CORP
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap