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Thin-film solar cells with porous high-resistance layers

A technology of solar cells and high resistance, applied in circuits, photovoltaic power generation, electrical components, etc., can solve problems such as increased battery series resistance, unfavorable device performance, and obstacles to the normal transport of photogenerated carriers

Active Publication Date: 2017-03-29
UNIV OF SCI & TECH OF CHINA
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, the addition of a high-resistance film also hinders the normal transport of photogenerated carriers, resulting in a corresponding increase in the series resistance of the battery, which is not conducive to the improvement of device performance.

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  • Thin-film solar cells with porous high-resistance layers
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Embodiment Construction

[0023] The present invention aims to solve the above problems, that is, while using a high-resistance film to reduce leakage caused by a short-circuit channel, it also reduces the hindering effect of the high-resistance film on the transport of photogenerated carriers. In order to achieve the above object, a specific embodiment of the present invention provides a new structure thin-film solar cell with a porous high-resistance film, characterized in that:

[0024] High-resistance thin films are discontinuous, that is, there are pores in the film, and the pores are evenly distributed in topological structure.

[0025] In a specific embodiment of the present invention, the density distribution of the carriers in the high-resistance film transmission is not uniform, and for the discontinuous porous high-resistance film, the low-resistance transport channel between the electrode and the semiconductor for the carriers for the pores. The transport of carriers in high-resistance fil...

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Abstract

The invention relates to a high-resistance thin film applied to a thin-film solar cell and the thin-film solar cell of a novel structure. According to the thin-film solar cell of the novel structure, the porous high-resistance thin film is additionally arranged at a light incidence front electrode of the thin-film solar cell. As the porous high-resistance thin film (hereinafter referred to as the high-resistance thin film) is additionally arranged between semiconductor materials and front electricity-conducting electrode materials, the high-resistance thin film can effectively resist electric leakage channels, and low-resistance channels for transmitting photon-generated carriers are retained.

Description

technical field [0001] The invention belongs to the field of preparation of solar photovoltaic devices, in particular to a new-structure thin-film solar cell with a porous high-resistance thin film. Background technique [0002] Generally speaking, the structure of thin-film solar cells mainly includes the following parts: transparent conductive layer (as the front electrode of the battery), N-type semiconductor layer (also called window layer), P-type semiconductor layer (absorption layer) and battery back electrode layer (positive terminal), such as figure 1 shown. As the window layer where sunlight is incident, the N-type semiconductor film is usually very thin to minimize the absorption loss of short-wavelength light in this film. The thinner the film of the window layer, the more prone to defects such as holes and discontinuities in the film, so that the transparent conductive layer and the absorbing layer, that is, the P-type semiconductor layer, are in direct contac...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L31/04H01L31/0248
CPCY02E10/50
Inventor 张振宇王德亮王子文沈凯
Owner UNIV OF SCI & TECH OF CHINA