A kind of led chip structure of ito structure and preparation method thereof

Abstract

The invention relates to an LED chip structure of an ITO structure and a preparing method of the LED chip structure. A nucleating layer, an undoped GaN layer, an N-type doped GaN layer and an InGaN / GaN multi-quantum-well structure are formed on a substrate in an epitaxial mode; after the multi-quantum-well structure grows in the epitaxial mode, growth is stopped, and a P-type doped ITO layer is adopted for replacing a traditional P-type GaN epitaxial layer; a P electrode is prepared on the P-type doped ITO layer, etching is carried out till the N-type doped GaN layer, and an N electrode is prepared on the N-type doped GaN layer; the P electrode is correspondingly arranged on the P-type doped ITO layer; an epitaxial wafer is etched, and the N electrode is manufactured on the N-type doped GaN layer. Uneven In distribution caused by P-GaN growth, after temperature rise, of the InGaN / GaN multi-quantum-well structure can be avoided, which is beneficial for improving the uniformity of wavelengths; P-GaN epitaxial growth is avoided, cost is reduced, and productivity is improved; as the ITO ultrathin layer which is high in light transmittance and conductivity is adopted as a P-type current expanding layer, the light emergence efficiency and the external quantum efficiency can be effectively improved.

Description

technical field [0001] The invention relates to an LED chip structure with an ITO structure and a preparation method thereof, belonging to the technical field of semiconductor epitaxy and chips. Background technique [0002] With the development of modern industry, the global energy crisis and air pollution problems have become increasingly prominent. LED has the advantages of high light efficiency, low power consumption, long life, high safety, high environmental protection, etc. It is an ideal lighting method, and more and more countries pay attention to it. [0003] Incandescent lamps and tungsten-halogen lighting effects are 12-24 lumens / watt, fluorescent lamps are 50-70 lumens / watt, and sodium lamps are 90-140 lumens / watt. Most of the power consumption becomes heat loss. After the LED light effect is improved, it will reach 50-200 lumens / watt, and its monochromaticity is good, the spectrum is narrow, and it can directly emit colored visible light without filtering. Th...

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Problems solved by technology

[0006] The present invention utilizes the high electrical conductivity and high light transmittance of the ITO material, which can effectively alleviate the current problems that the metal electrode shielding area of ​​the LED chip occupies a large effective light emitting area of ​​the chip, and the lateral expansion of P-GaN is difficult.

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