Thin film transistor
A thin film transistor and source technology, applied in transistors, semiconductor devices, optics, etc., can solve the problems of reducing display brightness, reducing the aperture ratio of the display unit, and the TFT channel cannot be increased indefinitely, so as to improve the on-state current, The effect of increasing the channel width to length ratio
Inactive Publication Date: 2015-02-04
CHONGQING BOE OPTOELECTRONICS +1
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However, the width W of the TFT channel cannot be increased infinitely, which will increase the area of the thin film transistor
The aperture ratio of the display unit is equal to the ratio of the light-transmitting area of the display unit after removing the opaque parts such as thin-film transistors to the area of the display unit. Therefore, increasing the area of the thin-film transistor will cause the aperture ratio of the display unit to decrease, reducing the display. brightness
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[0019] The following will clearly and completely describe the technical solutions in the embodiments of the present invention with reference to the accompanying drawings in the embodiments of the present invention. Obviously, the described embodiments are only some, not all, embodiments of the present invention. Based on the embodiments of the present invention, all other embodiments obtained by persons of ordinary skill in the art without making creative efforts belong to the protection scope of the present invention.
[0020] An embodiment of the present invention provides a thin film transistor, such as Figure 4-5 As shown, it includes a gate 21, a source 22 and a drain 23. The source 22 includes a ring with an opening. The width of the opening along the first direction is the largest, and the maximum width of the opening is smaller than that of the inner ring of the source 22 along the first direction. The maximum distance between any two points; the drain 23 is surrounde...
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The invention provides a thin film transistor, and relates to the field of field effect transistors. The breadth length ratio of the thin film transistor is large, so that on-state current can be increased. The thin film transistor comprises a grid electrode, a source electrode and a drain electrode, the source electrode comprises a ring with an opening, the width of the opening is the largest along a first direction, the maximum width of the opening is smaller than the maximum distance between two optional points on an inner ring of the source electrode along the first direction, the drain electrode is enclosed by the ring and does not contact with the source electrode, and the distances between the drain electrode and the inner ring of the source electrode are the same. The invention is used for the thin film transistor and a display panel and a display device comprising the thin film transistor.
Description
technical field [0001] The invention relates to the field of field effect transistors, in particular to a thin film transistor. Background technique [0002] TFT-LCD (Thin Film Transistor-Liquid Crystal Display, Thin Film Transistor-Liquid Crystal Display) has the characteristics of fast response, high contrast, vivid colors, etc., and occupies most of the liquid crystal display market. [0003] Such as figure 1 As shown, the TFT-LCD display panel includes a plurality of gate lines 11 and data lines 12 , the gate lines 11 and data lines 12 intersect to form a plurality of display units, and each display unit is provided with a thin film transistor 20 and a pixel electrode 13 . The display principle of the TFT-LCD is: to control the opening and closing of each thin film transistor 20 through the gate line 11 and the data line 12 , and write image signals to the corresponding pixel electrodes 13 to realize display. In practical applications, in order to ensure timely and acc...
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IPC IPC(8): H01L29/06H01L29/786
CPCH01L29/41733G02F1/1362H01L29/786
Inventor 王武邱海军尚飞王国磊
Owner CHONGQING BOE OPTOELECTRONICS