The production method of molybdenum target

A production method and molybdenum target technology, which are applied in metal material coating process, ion implantation plating, coating and other directions, can solve the problems of inability to meet sputtering requirements, many internal pores, and blank cracking.

Active Publication Date: 2017-06-30
广东江丰电子材料有限公司
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Problems solved by technology

However, the large-size molybdenum target obtained by the current molybdenum target powder metallurgy technology has a low density, only 80-90%, and many internal pores, which cannot meet the sputtering requirements to obtain a good molybdenum film; and in the rolling process Blank cracking is easy to occur in the process, which greatly reduces the yield of molybdenum target preparation

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  • The production method of molybdenum target
  • The production method of molybdenum target
  • The production method of molybdenum target

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Embodiment Construction

[0041] As mentioned in the background art, the large-sized molybdenum target obtained by the existing molybdenum target preparation process has low density and cannot meet the requirements of target sputtering. For this reason, the invention provides a method for making a molybdenum target. The molybdenum target material production method provided by the invention can prepare a large-sized molybdenum target material with a density as high as 99.94%, an average grain size of the molybdenum target material less than 50 μm, and a uniform grain structure. It fully meets the requirements of magnetron sputtering for large-size molybdenum targets.

[0042] The technical solutions of the present invention will be clearly and completely described below through specific embodiments in conjunction with the accompanying drawings.

[0043] First, refer to figure 1 As shown, step S1 is executed to provide molybdenum powder.

[0044] In this embodiment, the purity of the molybdenum powder...

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Abstract

A method for manufacturing a molybdenum target material comprises the steps that densification processing of molybdenum powder can be achieved through a hot pressed sintering technology; a first molybdenum target material blank can be obtained; further densification processing of the first molybdenum target material blank can be achieved gradually through a multi-stage hot rolling processing technology, and therefore the molybdenum target material with the molybdenum particle grain smaller than 50 micrometers, and the density higher than 99.94 percent can be obtained. Compared with a molybdenum target material obtained through a conventional molybdenum target material manufacturing method, the molybdenum target material obtained through the method is smaller and evener in molybdenum particle grain and high in density, has the better electrical properties and mechanical machining properties, and completely meets the molybdenum target material sputtering requirement.

Description

technical field [0001] The invention relates to the field of semiconductor manufacturing, in particular to a method for manufacturing a molybdenum target. Background technique [0002] Molybdenum is a silver-white metal, hard and tough, with a melting point of 2617°C and a boiling point of 4612°C. Molybdenum has good corrosion resistance and stability at room temperature, as well as low specific impedance, good electrical conductivity and good thermal expansion properties. Therefore, molybdenum is widely used in industries such as aerospace industry, electronics industry, glass manufacturing industry and solar photovoltaic industry. [0003] In the field of liquid crystal display (abbreviation, LCD) manufacturing in the electronics industry. Compared with traditional chromium wiring, molybdenum wiring can more effectively reduce the specific impedance and film stress of wiring, so molybdenum used in LCD components can effectively improve the brightness, contrast, color and...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C23C14/34B22F3/14B22F3/18B22F3/24
CPCB22F2003/185B22F2003/248C23C14/3414
Inventor 姚力军相原俊夫大岩一彦潘杰王学泽袁海军
Owner 广东江丰电子材料有限公司
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