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PH sensor with substrate or bonding layer configured to maintain piezoresistance of the ISFET die

A ph sensor and bonding layer technology, applied in piezoelectric devices/electrostrictive devices, instruments, circuits, etc., can solve problems such as limiting the accuracy of pH sensors and measurement errors

Active Publication Date: 2015-02-11
HONEYWELL INT INC
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Such wide pressure variations may limit the accuracy of conventional pH sensors due to measurement errors caused by the large mechanical stress associated in deep sea

Method used

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  • PH sensor with substrate or bonding layer configured to maintain piezoresistance of the ISFET die
  • PH sensor with substrate or bonding layer configured to maintain piezoresistance of the ISFET die
  • PH sensor with substrate or bonding layer configured to maintain piezoresistance of the ISFET die

Examples

Experimental program
Comparison scheme
Effect test

example 1

[0055] Example 1 includes a pH sensor configured for use over a pressure and temperature range, the pH sensor comprising: a substrate; an ion sensitive field effect transistor (ISFET) die including an ion sensing portion responsive to pH, wherein the ISFET die is bonded to a substrate, wherein the ion sensing portion of the ISFET die is configured to be exposed to the medium, and wherein the ion sensing portion outputs a signal related to the pH level of the medium; a bonding layer disposed between the substrate and the ISFET die, the bonding layer Bonded to the substrate and the ISFET die, and wherein the bonding layer includes a bonding agent material of a first composition; wherein pressure and temperature changes across the pressure and temperature range generate environmental forces within the pH sensor; and wherein at least one of the bonding layer or the substrate Change in volume over a range of pressure and temperature, wherein at least one of the bonding layer or the ...

example 2

[0056] Example 2 includes the pH sensor of Example 1, wherein at least one of the bonding layer or the substrate has anisotropic mechanical properties.

example 3

[0057] Example 3 includes the pH sensor of Example 1 or Example 2, wherein at least one of the bonding layer or the substrate has orthotropic mechanical properties.

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PUM

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Abstract

Embodiments described herein provide for a pH sensor that is configured for use over a pressure and temperature range. The ISFET die of the pH sensor is bonded to the substrate of the pH sensor with a bonding layer that is disposed between the substrate and the ISFET die. The pressure and temperature change across the pressure and temperature range generates an environmental force in the pH sensor. Further, the substrate or the bonding layer or both change volume over the pressure and temperature range, and the substrate or the bonding layer or both are configured such that the volume change induces a counteracting force that opposes at least a portion of the environmental force. The counteracting force is configured to maintain the change in piezoresistance of the ISFET die from the drain to the source to less than 0.5% over the pressure and temperature range.

Description

[0001] Statement Regarding Federally Funded Research or Development [0002] This invention was made with Government support under Contract No. N00014-10-1-0206 awarded by the Office of Naval Research. The government has certain rights in inventions. Background technique [0003] The researchers used a sensor device to measure pH levels in the ocean. The pH level in the ocean is related to the amount of CO2 dissolved in the ocean. By measuring pH levels in the ocean at different depths, researchers can monitor global warming risks and ocean health. Some pH sensors are able to measure these levels by submerging ion-sensitive field-effect transistors (ISFETs) in the ocean. In the ocean, there is an inverse relationship between water temperature and pressure. Near the surface, the temperature is high and the pressure is low. In the deep ocean, the temperature is lower but the pressure is higher. Such wide pressure variations may limit the accuracy of conventional pH sensors...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G01N27/414H01L29/78H10N30/00
CPCH01L41/08G01N27/414G01N27/4167
Inventor D·霍尔克黑默P·S·费奇纳D·S·威利茨
Owner HONEYWELL INT INC