Display substrate, manufacturing method thereof, and display device

Abstract

The invention provides a display substrate, a manufacturing method thereof, and a display device, belonging to the field of display. Wherein, the display substrate includes: a pattern of a buffer metal layer formed on the base substrate; an inorganic buffer layer located on the base substrate formed with the pattern of the buffer metal layer; a display device located on the inorganic buffer layer; Wherein, the thermal expansion coefficient of the buffer metal layer is between the thermal expansion coefficient of the electrodeless buffer layer and the thermal expansion coefficient of the substrate. The technical solution of the invention can buffer the effect of thermal stress caused by the substrate on the inorganic buffer layer, prevent the inorganic buffer layer from cracking, and improve the display effect of the display device.

Description

technical field [0001] The present invention relates to the display field, in particular to a display substrate, a manufacturing method thereof, and a display device. Background technique [0002] In recent years, the display market has developed rapidly, especially in the field of flat panel displays, such as LCD (liquid crystal display), PDP (plasma display), OLED (organic electroluminescence display), etc., which have been more and more widely used. [0003] However, the carriers of liquid crystal displays and organic electroluminescent displays mainly use glass substrates. Glass substrates have disadvantages such as brittleness and easy damage. They are used in the field of mobile display devices that require portability, thinner, and lighter weight, and in the field of large-size display devices. is restricted. Therefore, in recent years, flexible display devices prepared by replacing glass substrates with flexible substrates such as plastic substrates and metal foils ...

AI Technical Summary

Problems solved by technology

However, due to the large difference between the thermal expansion coefficient of PI and the inorganic buffer layer (the thermal expansion coefficient of PI is 16ppm / °C, SiNx and SiO 2 The thermal expansion coefficient is less than 5ppm / °C), and the inorganic buffer layer generally needs to be prepared at high temperature by PECVD (plasma enhanced chemical vapor deposition method). At high temperature, the PI layer will have a large thermal stress (compressive stress) on the inorganic buffer layer. In severe cases, the inorganic buffer layer may even be broken; in addition, the intrinsic stress of the inorganic buffer layer prepared by PECVD is also a relatively large compressive stress, which will make the inorganic buffer layer more likely to rupture.

[0006] The existing method to solve the above problems is to adjust the intrinsic stress of the inorganic buffer layer in contact with the PI layer to tensile stress by adjusting the process parameters, that is, to prepare the inorganic buffer layer into a film layer with a loose structure, but the process of adjusting the stress is more complicated , and the looseness of the film layer is not conducive to blocking water vapor. Therefore, the existing technology cannot solve the problem of the cracking of the inorganic buffer layer.

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