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Memory unit, semiconductor device structure, memory system and manufacturing method

A memory cell, semiconductor technology, used in semiconductor devices, static memory, digital memory information, etc.

Active Publication Date: 2017-07-21
MICRON TECH INC
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Therefore, it has become a challenge to design a cell core structure that achieves symmetric switching of the free region.

Method used

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  • Memory unit, semiconductor device structure, memory system and manufacturing method
  • Memory unit, semiconductor device structure, memory system and manufacturing method
  • Memory unit, semiconductor device structure, memory system and manufacturing method

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Embodiment Construction

[0029] Memory cells, semiconductor device structures including such memory cells, memory systems, and methods of forming such memory cells are disclosed. The memory cell includes a magnetic region exhibiting a perpendicular magnetic orientation. The magnetic region comprises one or more magnetic materials and one or more coupler materials arranged such that the magnetic material alternates with the coupler materials forming a structure referred to herein as an "alternating structure", wherein An amount of magnetic material (i.e., a "magnetic sub-region") is disposed adjacent to an amount of coupler material (i.e., a "coupler sub-region") that is adjacent to another amount of magnetic material ( That is, another magnetic sub-region) is disposed. Another amount of coupler material (ie, another coupler subregion) may be disposed adjacent to the other amount of magnetic material (ie, the other magnetic subregion), and so on. Thus, the magnetic region of the memory cell comprises...

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Abstract

The present invention discloses memory cells. The magnetic region within the memory cell includes an alternating structure of magnetic sub-regions and coupler sub-regions. The coupler material of the coupler subregions antiferromagnetically couples adjacent magnetic subregions and enables or facilitates the perpendicular magnetic orientation exhibited by the adjacent magnetic subregions. Adjacent magnetic subregions that are spaced apart from each other by the coupler subregions exhibit oppositely pointing magnetic orientations. The magnetic and coupler sub-regions can each be of a thickness tailored to form the magnetic region in a compact structure. Interference with switching of free regions in the memory cell by magnetic dipole fields emitted from the magnetic regions can be reduced or eliminated. The invention also discloses a semiconductor device structure, a spin torque transfer magnetic random access memory STT-MRAM system and a manufacturing method.

Description

[0001] priority claim [0002] This application claims that the serial number of the application titled "Memory Cells, Semiconductor Device Structures, Memory Systems, and Methods of Fabrication (Memory Cells, Semiconductor Device Structures, Memory Systems, and Methods of Fabrication)" filed on June 19, 2012 is 13 / 527,262 Interest in the filing date of the U.S. patent application. technical field [0003] In various embodiments, the present invention relates generally to the field of memory device design and fabrication. More particularly, the present invention relates to the design and fabrication of memory cells characterized as spin torque transfer magnetic random access memory (STT-MRAM) cells. Background technique [0004] Magnetic Random Access Memory (MRAM) is a non-volatile computer memory technology based on magnetoresistance. One type of MRAM cell is a spin torque transfer MRAM (STT-MRAM) cell, such as the STT-MRAM cell illustrated in FIG. 1 . A conventional S...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G11C11/15H10N50/01H10N50/10H10N50/80
CPCH01F10/3218H01F10/329H10B61/22H10N50/10H10N50/85G11C11/161G11C11/1673G11C11/1675H10B61/00H10N50/80
Inventor 韦恩·I·肯尼维托·库拉斯蒂芬·J·克拉梅尔
Owner MICRON TECH INC
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