Semiconductor device and its forming method, SRAM and its forming method

Abstract

A semiconductor device and its forming method and static random access memory and its forming method, the semiconductor device includes: a semiconductor substrate, the semiconductor substrate includes an active region and more than two rows of isolation trenches, the active region is located Between the adjacent isolation trenches; an isolation structure, the isolation structure includes a first isolation layer located on the bottom and sidewalls of the isolation trenches, a barrier layer located on the first isolation layer and located on the A second isolation layer on the barrier layer; a gate structure, the gate structure includes a first dielectric layer spanning the active region and at least part of the first isolation layer on both sides of the active region, located on the second A second dielectric layer on a dielectric layer and a metal gate on the second dielectric layer; side walls, the side walls are located on the isolation structure and cover the side walls of the gate structure, the side walls A wall covers at least part of the barrier layer. The semiconductor device formed by the invention has good performance and high yield.

Description

technical field [0001] The invention relates to the technical field of semiconductor manufacturing, in particular to a semiconductor device and its forming method, a static random access memory and its forming method. Background technique [0002] With the continuous development of modern high-tech industries represented by electronic communication technology, the total output value of the world's integrated circuit industry is growing at a rate of 30% every year. Static random access memory is an important component in integrated circuits, with small size and high density. Among semiconductor memory devices, Static Random Access Memory (SRAM) has the advantages of lower power consumption and faster working speed compared with Dynamic Random Access Memory (DRAM). Therefore, SRAMs and methods of forming them are attracting more and more attention. [0003] SRAM cells can be classified into resistive load SRAM cells and CMOS SRAM cells. The resistive load SRAM cell uses a h...

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