Unlock instant, AI-driven research and patent intelligence for your innovation.

Photoelectric semiconductor element with barrier layer

A kind of optoelectronic semiconductor and semiconductor technology, which is applied in the direction of semiconductor devices, electrical components, circuits, etc., and can solve the problems affecting the function of the tunneling layer 17 and poor transmittance

Active Publication Date: 2015-03-18
EPISTAR CORP
View PDF3 Cites 2 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The existing tunneling layer 17 is composed of a highly doped n+ semiconductor layer and a p+ semiconductor layer. Since the highly doped n+ semiconductor layer and p+ semiconductor layer have poor light transmittance, the tunneling layer 17 is usually It must be very thin to improve the transmittance of light, but the tunneling layer 17 is too thin, and it is easy to add dopants diffused from other semiconductor layers during the manufacturing process, which affects the function of the tunneling layer 17

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Photoelectric semiconductor element with barrier layer
  • Photoelectric semiconductor element with barrier layer
  • Photoelectric semiconductor element with barrier layer

Examples

Experimental program
Comparison scheme
Effect test

no. 1 example

[0031] image 3 It is a structural schematic diagram according to the first embodiment of the present invention. The optoelectronic semiconductor element disclosed according to the present invention is a double p-n junction structure, comprising a first semiconductor stack 1 and a second semiconductor stack 2 on a substrate 13, wherein the first semiconductor stack 1 is located on the second semiconductor stack On the layer 2, a tunnel stack 3 is located between the first semiconductor stack 1 and the second semiconductor stack 2, a barrier layer 4 is located between the tunnel stack 3 and the second semiconductor stack 2, and a first An electrode 51 is disposed on the surface 53 of the first semiconductor stack 1, and a second electrode 52 is disposed on the surface 54 of the substrate 13, the first electrode 51 and the second electrode 52 are used to guide current through the first semiconductor stack 1 and the second semiconductor stack 2.

[0032] The substrate 13 is a c...

no. 2 example

[0039] The difference between the second embodiment and the first embodiment is that the barrier layer 4 is a compound containing aluminum (Al), gallium (Ga), indium (In) or phosphorus (P), such as Al x Ga 1-x InP, where x can range from 0.05 to 0.95, preferably from 0.2 to 0.7, and doped with antimony (Sb), wherein the concentration of antimony (Sb) is between 10 17 ~10 18 cm -3 between. During the epitaxial process, since the barrier layer 4 is doped with antimony (Sb), it can inhibit the elements doped in the second semiconductor stack 2, such as magnesium (Mg) or zinc (Zn), from diffusing into the first electrical channel. In the tunneling layer 31, it is avoided that in the first electrical tunneling layer 31, the concentration of the second dopant exceeds 10 18 cm -3 , it is better to avoid exceeding 10 17 cm -3 .

[0040] Image 6 It is a structural schematic diagram according to another embodiment of the present invention. A bulb lamp 600 includes a lampshade...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention discloses a photoelectric semiconductor element, which comprises a barrier layer, a first semiconductor layer and a second semiconductor layer, wherein the first semiconductor layer is positioned on the barrier layer, and comprises a first doping substance and a second doping substance, the second semiconductor layer is positioned under the barrier layer and comprises a second doping substance, in the first semiconductor layer, the concentration of the first doping substance is greater than the concentration of the second doping substance, and in addition, the concentration of the second doping substance in the second semiconductor layer is greater than the concentration of the second doping substance in the first semiconductor layer.

Description

technical field [0001] The invention relates to the structure of an optoelectronic semiconductor component. Background technique [0002] Optoelectronic semiconductor components, such as light-emitting diodes (LEDs), have been continuously improved in brightness in recent years, and their application fields have expanded from traditional indicator lights or decorative purposes to light sources for various devices, and even in the near future, they are likely to replace traditional The fluorescent lamp has become the light source in the field of new generation lighting. [0003] The existing light-emitting diode (LED) structure is a single p-n junction structure, such as figure 1 As shown, its basic structure includes a substrate 13, an n-type semiconductor layer 11 on the substrate 13, a p-type semiconductor layer 12 on the n-type semiconductor layer 11, and a light emitting layer 10 on the p-type semiconductor layer 12 and n-type Between the semiconductor layers 11. [0...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): H01L33/14
CPCH01L33/14
Inventor 刘宗宪李荣仁李世昌
Owner EPISTAR CORP