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High b value high resistivity negative temperature coefficient thermistor material and preparation method thereof

A technology of negative temperature coefficient and thermistor, applied in the field of negative temperature coefficient thermistor material and its preparation, can solve the problem of low resistivity ρ, achieve uniform particle size distribution, broad market application prospects, and low production cost Effect

Active Publication Date: 2017-08-08
CHENGDU DELANT ELECTRONICS TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, the resistivity ρ of the high B value negative temperature coefficient thermistor material is low, and the resistivity ρ at a temperature of 350°C 350 Only 1340KΩ·m, when it is necessary to use high B value, high resistivity and negative temperature coefficient thermistor material, it is necessary to further increase the resistivity of the thermistor material under the premise of maintaining a high B value

Method used

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  • High b value high resistivity negative temperature coefficient thermistor material and preparation method thereof
  • High b value high resistivity negative temperature coefficient thermistor material and preparation method thereof
  • High b value high resistivity negative temperature coefficient thermistor material and preparation method thereof

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Experimental program
Comparison scheme
Effect test

Embodiment 1

[0031] The preparation method of the thermistor material described in this embodiment is as follows:

[0032] (1) Take analytically pure Al respectively 2 o 3 1mol, Cr 2 o 3 0.3mol, NiO 0.15mol, AlN 0.5mol, SiO 2 0.6mol, placed in a ball mill jar, then added agate balls and absolute ethanol to obtain a mixture; the weight ratio of the raw materials, dispersion medium and grinding balls was 1:4:6.

[0033] (2) The mixture obtained in step (1) was ball-milled at a speed of 350 r / min for 8 hours, and dried at 100° C. to obtain a powder.

[0034] (3) After fully grinding the powder obtained in step (2), press it into a block, wherein the pressure is 20kgf / cm 2 ;High-temperature treatment was carried out in a nitrogen-protected atmosphere furnace with a purity of 99.99%. The conditions for high-temperature treatment were: the airflow rate was 0.3L / min, and the heating rate was 5°C / min; pre-burning at 500°C for 6 hours; Calcined at constant temperature for 3h; annealed at 600°...

Embodiment 2

[0056] The preparation method of the thermistor material described in this embodiment is as follows:

[0057] (1) Take analytically pure Al respectively 2 o 3 1mol, Cr 2 o 3 0.35mol, NiO 0.2mol, AlN 0.55mol, SiO 2 0.65mol, placed in a ball mill jar, then added agate balls and absolute ethanol to obtain a mixture; the weight ratio of the raw materials, dispersion medium and grinding balls was 1:3:5.

[0058] (2) The mixture obtained in step (1) was ball-milled at a speed of 400 r / min for 6 hours, and dried at 80° C. to obtain a powder.

[0059] (3) After fully grinding the powder obtained in step (2), press it into a block, wherein the pressure is 10kgf / cm 2 ;High-temperature treatment is carried out in an atmosphere furnace protected by nitrogen with a purity of 99.99%. The conditions for high-temperature treatment are: the airflow rate is 0.4L / min, and the heating rate is 5°C / min; pre-burning at 600°C for 5 hours; Calcined at constant temperature for 3h; annealed at 600...

Embodiment 3

[0066] The preparation method of the thermistor material described in this embodiment is as follows:

[0067] (1) Take analytically pure Al respectively 2 o 3 1mol, Cr 2 o 3 0.33mol, NiO 0.1mol, AlN 0.3mol, SiO 2 0.45mol, placed in a stirring container, and then added acetone as a dispersion medium to obtain a mixture; the weight ratio of the raw material to acetone was 1:3.

[0068] (2) Stir the mixture obtained in step (1) at a stirring speed of 80 r / min for 24 h, and dry at 90° C. to obtain a powder.

[0069] (3) After fully grinding the powder obtained in step (2), press it into a block with a pressure of 15kgf / cm 2 ;High-temperature treatment is carried out in an atmosphere furnace protected by argon gas with a purity of 99.99%. The conditions for high-temperature treatment are: the airflow rate is 0.5L / min, and the heating rate is 8°C / min; pre-burning at 550°C for 6 hours; Roasting at constant temperature for 5h; annealing at 650°C for 10h.

[0070] (4) Natural co...

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Abstract

The invention discloses a high B value high resistivity negative temperature coefficient thermistor material. The thermistor material includes the following components: Al 2 o 3 、Cr 2 o 3 , NiO, AlN and SiO 2 , where Al 2 o 3 、Cr 2 o 3 , NiO, AlN and SiO 2 The molar ratio is 1:0.2~0.5:0.1~0.3:0.2~0.7:0.4~0.7. The thermistor material has good negative temperature coefficient thermal characteristics, and the resistivity in the temperature range of 300-500°C is 5.0×10 7 ~6.0×10 9 Ω·m, the material characteristic constant B value is 5400K-13000K. At the same time, the thermistor material also has good characteristics of small particle size, uniform particle size distribution, and good stability. The invention also provides a preparation method of the thermistor material. The preparation method of the invention has wide source of raw materials, simple preparation process, easy to master, low production cost and broad market application prospect.

Description

technical field [0001] The invention belongs to the field of synthesis of inorganic functional materials, in particular to a negative temperature coefficient thermistor material for medium temperature and a preparation method thereof. Background technique [0002] Negative temperature coefficient thermistor (NTC, negative temperature coefficient) is an electronic component whose resistance value decreases with the increase of temperature. Thermistors have many advantages such as high sensitivity, good interchangeability, little influence by magnetic fields, high reliability, and short response time, and have been widely used in temperature measurement, temperature control, and compensation. At present, most NTC thermistor materials are semiconductor ceramic materials made of transition metal oxides such as Mn, Co, Ni, Cu, Fe, Zn and their combinations, which are fully mixed, formed, and sintered. [0003] The early binary system NTC thermistor materials are gradually replac...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C04B35/10C04B35/622
Inventor 康雪雅
Owner CHENGDU DELANT ELECTRONICS TECH