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Film formation method of induction material in deep trench

A technology of sensing materials and film-forming methods, applied in metal material coating technology, technology for producing decorative surface effects, decorative art, etc., can solve the problems of a large number of materials, increase the cost of device production, etc., and achieve the reduction of gluing steps , the effect of reducing cost and subsequent etching time

Active Publication Date: 2016-08-17
SHANGHAI HUAHONG GRACE SEMICON MFG CORP
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  • Abstract
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  • Claims
  • Application Information

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Problems solved by technology

Since this method needs to apply glue three times, not only a large amount of material is required, but also a large amount of working time is required, so the production cost of the device will be increased.

Method used

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  • Film formation method of induction material in deep trench
  • Film formation method of induction material in deep trench
  • Film formation method of induction material in deep trench

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Embodiment Construction

[0039] In order to have a more specific understanding of the technical content, characteristics and effects of the present invention, now in conjunction with the accompanying drawings, the details are as follows:

[0040] see Figure 3 ~ Figure 12 As shown, the specific manufacturing process for forming a zigzag sensing material film in a deep trench in this embodiment is as follows:

[0041] Step 1, grow a layer of hard mask 102 on the silicon substrate 101, such as image 3 shown. The material of the hard mask 102 may be an oxide film, or a material such as silicon nitride.

[0042] Step 2, coating a layer of photoresist 103 on the hard mask 102, and forming a deep trench photolithographic window, such as Figure 4 shown.

[0043] The photoresist can be positive resist or negative resist, and the typical baking temperature is 90°C for 60 seconds. The lithography machine used can be any type of lithography machine, a typical lithography machine is Nikon I-14, and the photo...

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Abstract

The invention discloses a film forming method for an induction material in a deep trench. The method comprises the following steps: (1), a hard mask is grown on a silicon substrate; (2), the hard mask is coated with photoresist to form a photolithographic window of the deep trench; (3), the deep trench is formed through photolithographic etching; (4), the hard mask is removed through wet etching; (5), the induction material is deposited; (6), a photoresist filled type material is spin-coated twice, and still standing is performed for 10-20 s after the second-time spin-coating, and then baking is performed; (7), the photoresist is applied, exposed and developed; and (8), a final pattern is formed through etching. According to optimization of a coating menu, standing time is prolonged by 10-20 s in the final step of coating, the photoresist flows into the deep trench from the part near a position above the deep trench, by means of the shape following feature of the photoresist, the side wall and fillet parts of the trench are protected and a pattern similar to the trench is kept, so that one coating step is reduced, and the cost and follow-up etching time are reduced under the premise that the device performance is not influenced.

Description

technical field [0001] The invention relates to the field of integrated circuit manufacturing, in particular to a method for forming a specific shape-sensitive material film on the surface of a deep groove in a micromechanical system. Background technique [0002] Micro-Electro-Mechanical Systems (MEMS) is a multidisciplinary frontier research field developed on the basis of microelectronics technology. As far as the semiconductor industry is concerned, the integration of MEMS and production process technology will bring a great leap forward for the system single chip. In the future, it is expected to integrate subsystems such as audio, light, chemical analysis, pressure, and temperature sensing in a single chip, so that chips with sensory functions such as human eyes, nose, ears, and skin can be developed; And the ability to control, it surpasses the ability of the human body. [0003] At present, there are three main technologies commonly used to manufacture MEMS devices...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): B81C1/00
Inventor 孟鸿林
Owner SHANGHAI HUAHONG GRACE SEMICON MFG CORP