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55results about How to "Without compromising performance" patented technology

Charging device

The invention discloses a charging device which comprises a master control charging unit, a man-machine interaction interface, a communication unit, an information reading unit, a metering unit, an alternating current contactor and a charging socket. An intelligent charging pile further comprises a power grid real-time load detection unit, a charging load adjusting unit, a battery information detection unit, a money recognition unit and an information storage unit. The master control charging unit comprises an information processing center module, a communication module, a user request information receiving module, an instruction output module, a metering information receiving module, a power grid information receiving module and a battery information receiving module, wherein the communication module, the user request information receiving module, the instruction output module, the metering information receiving module, the power grid information receiving module and the battery information receiving module are connected with the information processing center module respectively. The power grid real-time load detection unit, the metering unit, the charging load adjusting unit and the alternating current contactor are sequentially connected on a circuit between a power grid and a charging socket in series. The charging pile is safe and reliable, comprehensive in functions and more suitable for using of the mass.
Owner:GUANGXI SHIFANG TECH

Diamond-based multi-channel barrier regulation and control field-effect transistor and preparation method thereof

The invention discloses a diamond-based multi-channel barrier regulation and control field-effect transistor and a preparation method thereof. The field-effect transistor comprises a diamond substrate, and is characterized in that the diamond substrate is provided with a single crystal diamond epitaxial film; the single crystal diamond epitaxial film is provided with mesa regions; the single crystal diamond epitaxial film is provided with etching regions; each mesa region is internally provided with a multi-channel trench region and the etching region; each multi-channel trench region includesa two-dimensional hole gas conductive layer; each etching region includes an oxygen, fluorine or nitrogen terminal; a source electrode and a drain electrode are located at two sides of the mesa regions; and a grid electrode is arranged in the multi-channel trench regions and the etching regions between the source electrode and the drain electrode, and the grid electrode is arranged in the etchingregions on the single crystal diamond epitaxial film at the same time. The transistor device disclosed by the invention can obtain normally-closed characteristics without damaging the performance ofthe conductive trenches. Meanwhile, the multi-channel structure also can ensure the current passing ability between the source and the drain of the device.
Owner:XI AN JIAOTONG UNIV

Diamond-based field effect transistor with low work function conductive gate and preparation method thereof

The invention discloses a diamond-based field effect transistor with a low work function conductive gate and a preparation method thereof. The diamond-based field effect transistor comprises a diamondsubstrate, wherein a single crystal diamond epitaxial film is provided on the diamond substrate; a source and a drain are provided on the single crystal diamond epitaxial film; a conductive channel is formed on the single crystal diamond epitaxial film between the source and the drain; a low work function conductive gate layer is disposed on the conductive channel, and a gate electrode is disposed on the low work function conductive gate layer, wherein the low work function conductive gate layer is in contact with the conductive channel to generate a barrier height that reaches a predetermined threshold for pinching off the channel. The diamond-based field effect transistor provided by the invention utilizes a space charge region generated by a Schottky barrier to completely deplete the two-dimensional hole gas generated on the surface of the hydrogen terminal diamond, and pinch-off the channel to realize the characteristics of a normally-off device, which caused no damage to the performance of the conductive channel while ensuring the current passing capability between the source and drain of the device.
Owner:XI AN JIAOTONG UNIV

A diamond-based multi-channel barrier control field effect transistor and its preparation method

The invention discloses a diamond-based multi-channel barrier regulation and control field-effect transistor and a preparation method thereof. The field-effect transistor comprises a diamond substrate, and is characterized in that the diamond substrate is provided with a single crystal diamond epitaxial film; the single crystal diamond epitaxial film is provided with mesa regions; the single crystal diamond epitaxial film is provided with etching regions; each mesa region is internally provided with a multi-channel trench region and the etching region; each multi-channel trench region includesa two-dimensional hole gas conductive layer; each etching region includes an oxygen, fluorine or nitrogen terminal; a source electrode and a drain electrode are located at two sides of the mesa regions; and a grid electrode is arranged in the multi-channel trench regions and the etching regions between the source electrode and the drain electrode, and the grid electrode is arranged in the etchingregions on the single crystal diamond epitaxial film at the same time. The transistor device disclosed by the invention can obtain normally-closed characteristics without damaging the performance ofthe conductive trenches. Meanwhile, the multi-channel structure also can ensure the current passing ability between the source and the drain of the device.
Owner:XI AN JIAOTONG UNIV

Diamond-based field-effect transistor with low work function conductive gate and its preparation method

The invention discloses a diamond-based field effect transistor with a low work function conductive gate and a preparation method thereof. The diamond-based field effect transistor comprises a diamondsubstrate, wherein a single crystal diamond epitaxial film is provided on the diamond substrate; a source and a drain are provided on the single crystal diamond epitaxial film; a conductive channel is formed on the single crystal diamond epitaxial film between the source and the drain; a low work function conductive gate layer is disposed on the conductive channel, and a gate electrode is disposed on the low work function conductive gate layer, wherein the low work function conductive gate layer is in contact with the conductive channel to generate a barrier height that reaches a predetermined threshold for pinching off the channel. The diamond-based field effect transistor provided by the invention utilizes a space charge region generated by a Schottky barrier to completely deplete the two-dimensional hole gas generated on the surface of the hydrogen terminal diamond, and pinch-off the channel to realize the characteristics of a normally-off device, which caused no damage to the performance of the conductive channel while ensuring the current passing capability between the source and drain of the device.
Owner:XI AN JIAOTONG UNIV
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