56results about How to "Without compromising performance" patented technology

A technology for processing the down with antibacterial, antivirus, antimildew and deodouring health-care functions includes defatting, washing, centrifugal drying, immersing in chitin solution or spraying the chitin solution onto the down, centrifugal drying and baking.

The invention discloses an intelligent electromobile charging pile which comprises a charging main control unit, a man-machine interaction interface, a communication unit, an information reading unit, a metering unit, an alternating-current contactor, a charging socket, a power grid real-time load detection unit, a charging load adjusting unit and a coin recognition unit. The man-machine interaction interface, the communication unit, the information reading unit, the metering unit, the alternating-current contactor, the charging socket, the power grid real-time load detection unit, the charging load adjusting unit and the coin recognition unit are connected with the charging main control unit respectively, and the power grid real-time load detection unit, the metering unit, the charging load adjusting unit and the alternating-current contactor are serially connected on a line between a power grid and the charging socket sequentially. The intelligent electromobile charging pile is safe, reliable, comprehensive in function and more suitable for the masses to use.

The present invention relates to a device for holding hair, such as a hairband. A hairband 1 extends along a section of a circumference of a circle having a virtual centre point M. The hairband 1 has a first end portion 10 having a first end 100, a second end portion 11 having a second end 110, and a middle portion 2. The middle portion 2 comprises at least two strings of material 20 and 21 having different elasticity.

The invention discloses a diamond-based multi-channel barrier regulation and control field-effect transistor and a preparation method thereof. The field-effect transistor comprises a diamond substrate, and is characterized in that the diamond substrate is provided with a single crystal diamond epitaxial film; the single crystal diamond epitaxial film is provided with mesa regions; the single crystal diamond epitaxial film is provided with etching regions; each mesa region is internally provided with a multi-channel trench region and the etching region; each multi-channel trench region includesa two-dimensional hole gas conductive layer; each etching region includes an oxygen, fluorine or nitrogen terminal; a source electrode and a drain electrode are located at two sides of the mesa regions; and a grid electrode is arranged in the multi-channel trench regions and the etching regions between the source electrode and the drain electrode, and the grid electrode is arranged in the etchingregions on the single crystal diamond epitaxial film at the same time. The transistor device disclosed by the invention can obtain normally-closed characteristics without damaging the performance ofthe conductive trenches. Meanwhile, the multi-channel structure also can ensure the current passing ability between the source and the drain of the device.

The present invention relates to hoop reinforcements for tires of heavy civil engineering vehicles, with the aim of reducing the manufacturing costs thereof. The tire has a crown reinforcement (3) located radially on the inside of the tread (2), comprising a protective reinforcement (6), a working reinforcement (5) and a hooping reinforcement (7). Said hoop reinforcement (7) is composed of at least two hoop layers (71, 72), each hoop layer (71, 72) comprising a metal reinforcement coated with an elastomeric coating material and associated with The circumferential direction (XX') forms an angle equal to at most 2.5°. According to the invention, each hoop layer ( 71 , 72 ) is formed by circumferentially winding at least one portion of a metal reinforcement ply ( 81 , 82 ) annularly in a circumferential direction (XX'), said The metal reinforcement ply (81, 82) extends from a starting end (811, 821) to a terminating end (812, 822) such that the hooping layer (71, 72) includes at least one discontinuity (91, 92).

The invention discloses yarns with non-uniform fiber distribution, a fabric and a preparation method thereof. The preparation method of the yarns with non-uniform fiber distribution comprises the following steps of: (1) first opening and mixing: arranging polyester fibers and cellulose fibers on a bale plucker not uniformly, and opening and mixing the fibers; (2) first carding: carding the fibersprepared in the step (1) to obtain first carded slivers; (3) second opening and mixing: arranging natural fibers in the bale plucker, and opening and mixing the fibers; (4) second carding: carding the fibers prepared in the step (3) to obtain second carded slivers; (5) drawing: arranging the first carded slivers and the second carded slivers on an elevated platform of a drawing frame not uniformly, and drawing the carded slivers; (6) roving; (7) spinning; and (8) spooling. The surface color textures of the fabric woven by adopting the yarns are arranged transversely and non-uniformly, and thewhole fabric is very attractive.

The invention provides a diamond recovery and reutilization method and a product of the method. The method is simple in procedures, can recover diamonds from sapphire grinding waste slurry, and does not damage the properties of the diamonds, thereby reutilizing the diamond, greatly enhancing the efficiency and reducing the hazardous waste generated in the saponifying step and petroleum ether cleaning. The method does not increase additional hazardous waste products, and thus, is more environment-friendly and prevents the hidden danger of material combustion in the drying step. The diamond powder particles have high purity, can be reutilized, and can effectively lower the cost of the sapphire grinding processing technique.

The invention discloses a diamond-based field effect transistor with a low work function conductive gate and a preparation method thereof. The diamond-based field effect transistor comprises a diamondsubstrate, wherein a single crystal diamond epitaxial film is provided on the diamond substrate; a source and a drain are provided on the single crystal diamond epitaxial film; a conductive channel is formed on the single crystal diamond epitaxial film between the source and the drain; a low work function conductive gate layer is disposed on the conductive channel, and a gate electrode is disposed on the low work function conductive gate layer, wherein the low work function conductive gate layer is in contact with the conductive channel to generate a barrier height that reaches a predetermined threshold for pinching off the channel. The diamond-based field effect transistor provided by the invention utilizes a space charge region generated by a Schottky barrier to completely deplete the two-dimensional hole gas generated on the surface of the hydrogen terminal diamond, and pinch-off the channel to realize the characteristics of a normally-off device, which caused no damage to the performance of the conductive channel while ensuring the current passing capability between the source and drain of the device.