A diamond-based multi-channel barrier control field effect transistor and its preparation method

A diamond and field regulation technology, which is applied in transistors, semiconductor/solid-state device manufacturing, semiconductor devices, etc., can solve problems such as reducing surface channel carrier concentration and mobility, sacrificing the maximum current of source and drain, and external transconductance. To achieve the effect of ensuring current transport capacity and strong carrier depletion capacity
CN109285894BActive Publication Date: 2021-01-19XI AN JIAOTONG UNIV
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Patent Information

Authority / Receiving Office
CN · China
Patent Type
Patents(China)
Current Assignee / Owner
XI AN JIAOTONG UNIV
Publication Date
2021-01-19

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Abstract

The invention discloses a diamond-based multi-channel barrier regulation and control field-effect transistor and a preparation method thereof. The field-effect transistor comprises a diamond substrate, and is characterized in that the diamond substrate is provided with a single crystal diamond epitaxial film; the single crystal diamond epitaxial film is provided with mesa regions; the single crystal diamond epitaxial film is provided with etching regions; each mesa region is internally provided with a multi-channel trench region and the etching region; each multi-channel trench region includesa two-dimensional hole gas conductive layer; each etching region includes an oxygen, fluorine or nitrogen terminal; a source electrode and a drain electrode are located at two sides of the mesa regions; and a grid electrode is arranged in the multi-channel trench regions and the etching regions between the source electrode and the drain electrode, and the grid electrode is arranged in the etchingregions on the single crystal diamond epitaxial film at the same time. The transistor device disclosed by the invention can obtain normally-closed characteristics without damaging the performance ofthe conductive trenches. Meanwhile, the multi-channel structure also can ensure the current passing ability between the source and the drain of the device.
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Description

technical field

[0001] The invention belongs to the technical field of semiconductor devices, and in particular relates to a normally-off diamond-based field-effect transistor and a preparation method thereof, in particular to a diamond-based multi-channel potential barrier regulation field-effect transistor and a preparation method thereof. Background technique

[0002] Semiconductor single crystal materials have gone through four generations of development. The first generation of Si and Ge semiconductors brought mankind into the information age, and at the same time drove the intelligence and informatization of electronic systems. The second-generation semiconductors (GaAs, InP, MCT, etc.) have brought us optoelectronic devices, power electronic devices, radio frequency electronic devices, and space radiation-resistant devices, which have triggered revolutions in information fields such as wireless communications and optical communications. The third-generation wide-band...

Claims

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