Diamond-based field-effect transistor with low work function conductive gate and its preparation method

A low work function, conductive gate technology, applied in semiconductor/solid-state device manufacturing, semiconductor devices, circuits, etc., can solve the problem of reducing the surface channel carrier concentration and mobility, sacrificing the external transconductance of the source and drain maximum current of the device, etc. problems, to achieve the effect of realizing the characteristics of normally-off devices, ensuring the ability of current passing, and ensuring the ability of current transport
CN109904227BActive Publication Date: 2021-01-19XI AN JIAOTONG UNIV
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Patent Information

Authority / Receiving Office
CN · China
Patent Type
Patents(China)
Current Assignee / Owner
XI AN JIAOTONG UNIV
Publication Date
2021-01-19

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Abstract

The invention discloses a diamond-based field effect transistor with a low work function conductive gate and a preparation method thereof. The diamond-based field effect transistor comprises a diamondsubstrate, wherein a single crystal diamond epitaxial film is provided on the diamond substrate; a source and a drain are provided on the single crystal diamond epitaxial film; a conductive channel is formed on the single crystal diamond epitaxial film between the source and the drain; a low work function conductive gate layer is disposed on the conductive channel, and a gate electrode is disposed on the low work function conductive gate layer, wherein the low work function conductive gate layer is in contact with the conductive channel to generate a barrier height that reaches a predetermined threshold for pinching off the channel. The diamond-based field effect transistor provided by the invention utilizes a space charge region generated by a Schottky barrier to completely deplete the two-dimensional hole gas generated on the surface of the hydrogen terminal diamond, and pinch-off the channel to realize the characteristics of a normally-off device, which caused no damage to the performance of the conductive channel while ensuring the current passing capability between the source and drain of the device.
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Description

technical field

[0001] The invention belongs to the technical field of semiconductor devices, and relates to a normally-off diamond-based field-effect transistor and a preparation method thereof, in particular to a diamond-based field-effect transistor with a low work function conductive gate and a preparation method thereof. Background technique

[0002] Semiconductor single crystal materials have gone through four generations of development. The first generation of Si and Ge semiconductors brought mankind into the information age, and at the same time drove the intelligence and informatization of electronic systems. The second-generation semiconductors (GaAs, InP, MCT, etc.) have brought us optoelectronic devices, power electronic devices, radio frequency electronic devices, and space radiation-resistant devices, which have triggered revolutions in information fields such as wireless communications and optical communications. The third-generation wide-bandgap semiconducto...

Claims

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