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Vapor deposition system and vapor deposition method

A technology of vapor phase deposition and process gas, which is applied in the direction of gaseous chemical plating, metal material coating process, coating, etc., can solve the problem of uneven film thickness and achieve uniform film thickness and uniform temperature

Active Publication Date: 2019-08-27
BOE TECH GRP CO LTD
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  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] The invention provides a vapor deposition system, which solves the technical problem of uneven film thickness formed by vapor deposition in the prior art

Method used

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  • Vapor deposition system and vapor deposition method
  • Vapor deposition system and vapor deposition method
  • Vapor deposition system and vapor deposition method

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Embodiment Construction

[0042] The following will clearly and completely describe the technical solutions in the embodiments of the present invention with reference to the accompanying drawings in the embodiments of the present invention. Obviously, the described embodiments are only some, not all, embodiments of the present invention. Based on the embodiments of the present invention, all other embodiments obtained by persons of ordinary skill in the art without making creative efforts belong to the protection scope of the present invention.

[0043] A vapor deposition system provided by an embodiment of the present invention, such as image 3 and Figure 4 shown, including:

[0044] containment chamber 100;

[0045] A base 200 for carrying substrates disposed in the accommodation chamber 100, the base 200 separates the accommodation chamber to form a sealable reaction chamber 110;

[0046] A spray device 300 disposed in the reaction chamber opposite to the base platform, wherein the spray device...

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Abstract

The invention discloses a vapor deposition system and a vapor deposition method. The vapor deposition system comprises an accommodating chamber, a base station, a spray device and an air cooling device, wherein the base station is arranged in the accommodating chamber and is used for bearing a base plate; the accommodating chamber is separated by the base station to form a closed-able reaction chamber; the spray device is arranged in the reaction chamber oppositely to the base station; the spray device is used for spraying process gas used for vapor deposition; the air cooling device is arranged in the accommodating chamber and outside the reaction chamber; the air cooling device comprises a plurality of air outlets through which cold air can go and air outlet volume of the air outlet can be singly controlled; and the cold air of the air outlets of the air cooling device can be blown to the base station. The invention discloses the vapor deposition method using the vapor deposition system. According to the vapor deposition system and the vapor deposition method, the air outlet volume of the air outlets can be singly controlled, area temperature of the base plate is relatively uniform, and then the thickness of the film formed by vapor deposition is uniform.

Description

technical field [0001] The invention relates to the field of display panel manufacturing, in particular to a vapor deposition system and a vapor deposition method. Background technique [0002] In the manufacturing process of thin film transistor liquid crystal display, chemical vapor deposition is one of the important processes for forming thin film transistors on the substrate. The chemical vapor deposition system uses high-frequency voltage in a high-temperature vacuum environment to generate plasma from the process gas, and finally forms a solid semiconductor to deposit on the substrate to form a thin film. Temperature is one of the main factors affecting the thickness of the film. The transport effect of the film after deposition is better at high temperature, and the film layer is more densely stacked and the thickness is smaller. [0003] Existing chemical vapor deposition systems such as figure 1 As shown, it includes a reaction chamber 10, a base 20 for placing a ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C23C16/44C23C16/52
Inventor 张慧娟刘建宏
Owner BOE TECH GRP CO LTD