Unlock instant, AI-driven research and patent intelligence for your innovation.

Solid-state image pickup device

A technology of solid-state imaging device and pixel circuit, which is applied in the direction of image communication, TV, color TV parts, etc., can solve the problem of voltage drop, etc., and achieve the effect of short judgment period, small-scale circuit structure, and realization of circuit structure

Active Publication Date: 2015-05-27
SHARP KK
View PDF10 Cites 9 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0009] However, if Figure 13 As shown by the dotted line in , it is known that when the PD unit 101 receives strong light, the voltage VS of the column signal line 111 will decrease from the time of sampling the reset level before the charge is transferred.
In this case, Vele is approximately 0, so it will be mistakenly judged as black (= dark state)

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Solid-state image pickup device
  • Solid-state image pickup device
  • Solid-state image pickup device

Examples

Experimental program
Comparison scheme
Effect test

no. 1 approach 〉

[0080] Hereinafter, a solid-state imaging device (hereinafter referred to as "the device 1 of the present invention") according to one embodiment of the present invention will be described with reference to the drawings. figure 1 An example of the circuit configuration of the device 1 of the present invention is shown.

[0081] Device 1 of the present invention is a CMOS image sensor, such as figure 1 As shown, the pixel circuits 100 are arranged in a matrix in a plurality of column and row directions. Each of the pixel circuits 100 is connected to a column signal line 111 , a row signal line 112 , and a common power supply line 113 . The pixel circuits 100 belonging to the same column are connected to a common column signal line 111 . On the other hand, the pixel circuits 100 belonging to the same row are connected to a common row signal line 112 , and connected to the row scanning circuit 110 via the row signal line 112 . Among them, the row signal line 112 includes thr...

no. 2 approach 〉

[0138] Next, a solid-state imaging device (hereinafter referred to as "the device 2 of the present invention" as appropriate) according to one embodiment of the present invention will be described with reference to the drawings. Figure 9 An example of the circuit configuration of the device 2 of the present invention is shown. Device 2 of the present invention, in figure 1 In the shown device 1 of the present invention, instead of the reference voltage generating circuit 116, a bias voltage generating circuit 117 is provided, and clamp voltage generating transistors 118 are provided for each column.

[0139] The clamp voltage generation transistor 118 is provided for each column, its gate terminal is connected to the bias voltage generation circuit, its drain terminal is connected to the reference voltage, and its source terminal is connected to the column signal line 111 . Therefore, the clamp voltage generating transistor constitutes a source follower circuit. The clamp ...

no. 3 approach 〉

[0145] In the above-mentioned first and second embodiments, it has been described that the voltage of the column signal line 111 is clamped during the period Tclmp, and based on the slope of the voltage change of the column signal line 111 after the period Tclmp has elapsed, whether the light received by the pixel circuit 100 is affected. A method of judging for intense light. However, it is also possible to employ a method of performing strong light determination without clamping the voltage of the column signal line 111 .

[0146] Figure 11 A configuration example of a solid-state imaging device according to an embodiment of the present invention (hereinafter appropriately referred to as "the device 3 of the present invention") is shown. The device 3 of the present invention is similar to the present invention except that there is no circuit for clamping the column signal line voltage (reference voltage generating circuit 116 or bias voltage generating circuit 117, wiring ...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

Provided is a solid-state imaging device in which blackening due to intense light can be corrected with a small-scale circuit. An A / D converter (130) that samples an output voltage (VS) on a column signal line (111) comprises a comparator (131), a determination circuit (132), and a memory unit (133). The comparator (131) compares the output voltage (VS) with a ramp-wave reference voltage during sampling periods. The output of the comparator (131) is inputted to the determination circuit (132), which determines what level the output voltage (VS) is at. On the basis of the output of the determination circuit (132), the memory unit (133) stores, as a digital value, a count value corresponding to the output voltage (VS). The comparator (131) amplifies changes in the output voltage (VS) after a reset period during which the voltages of FD units (103) in pixel circuits (100) are reset. The determination circuit (132) determines whether or not light received by the pixel circuits (100) was intense light on the basis of the aforementioned voltage changes during a prescribed detection period between periods during which the output voltage (Vrst) during and after the reset period is sampled.

Description

technical field [0001] The present invention relates to a solid-state imaging device represented by a CMOS image sensor and a driving method thereof. Background technique [0002] In recent years, compared with conventional CCD image sensors, CMOS image sensors have been widely used in mobile phones and digital cameras due to their advantages of low voltage, low power consumption, and easy integration with peripheral circuits as image sensing devices. [0003] Figure 12 It is a figure explaining the structure of the conventional CMOS image sensor 4. The general structure of a conventional CMOS image sensor is that pixel circuits 100 are arranged in a matrix, and a common power supply line 113 for supplying a pixel common voltage VD, a row scanning circuit 110, and a column signal line 111 are respectively connected to the pixel circuits 100. The control driving of the pixel circuit 100 is performed by the row scanning circuit 110 for each row. The column signal line 111 i...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): H04N5/359H04N5/374H04N25/65
CPCH04N25/627H04N25/616H04N25/78H04N25/75H04N25/778
Inventor 由井达哉星野幸三
Owner SHARP KK