Unlock instant, AI-driven research and patent intelligence for your innovation.

Substrate Processing Apparatus And Method Of Manufacturing Semiconductor Device

一种衬底处理装置、衬底的技术，应用在半导体/固态器件制造、电气元件、气态化学镀覆等方向，能够解决难以形成阶梯覆盖性等问题，达到抑制副产物的产生的效果

Active Publication Date: 2015-06-03
KOKUSAI DENKI KK
View PDF6 Cites 5 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] In order to process this high-aspect-ratio groove, attempts have been made to process the gas by heating it or turning the gas into a plasma state, but it has been difficult to form a film with good step coverage.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Substrate Processing Apparatus And Method Of Manufacturing Semiconductor Device
  • Substrate Processing Apparatus And Method Of Manufacturing Semiconductor Device
  • Substrate Processing Apparatus And Method Of Manufacturing Semiconductor Device

Examples

Experimental program
Comparison scheme
Effect test

no. 1 Embodiment approach ＞

[0033] (1) Structure of the substrate processing device

[0034] Below, use Figure 1 to Figure 3 A substrate processing apparatus according to a first embodiment of the present invention will be described. figure 1 is a cross-sectional view of the substrate processing apparatus of this embodiment.

[0035] Hereinafter, one embodiment of the present invention will be described based on the drawings.

[0036] (1) Structure of the substrate processing device

[0037] First, a substrate processing apparatus according to an embodiment of the present invention will be described.

[0038] The processing device 100 of this embodiment will be described. The substrate processing apparatus 100 is an apparatus for forming a thin film, such as figure 1 As shown, it is constituted as a leaf-type substrate processing device.

[0039] Such as figure 1 As shown, the substrate processing apparatus 100 has a processing vessel 202 . The processing container 202 is configured, for example...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

A substrate processing apparatus capable of suppressing generation of by-products in a buffer space in even a single-wafer apparatus using the buffer space, and a method of manufacturing a semiconductor device are provided. The substrate processing apparatus includes a process chamber including a placement unit having a placing surface whereon a substrate is placed, a shower head including a buffer chamber and installed at upstream side of the process chamber, a gas supply system configured to alternately supply at least two types of gases into the process chamber via the buffer chamber of the shower head, and a heating unit configured to heat the buffer chamber to a first temperature and the process chamber to a second temperature which is higher than the first temperature while the at least two types of gases are supplied via the gas supply system.

Description

technical field [0001] The invention relates to a substrate processing device and a method for manufacturing a semiconductor device. Background technique [0002] In recent years, semiconductor devices such as flash memory tend to be highly integrated. Along with this, the pattern size is significantly reduced. When forming these patterns, a step of performing a predetermined treatment such as oxidation treatment or nitriding treatment on the substrate may be performed as one of the manufacturing steps. [0003] As one of the methods of forming the above pattern, there is a step of forming a groove between circuits and forming a liner film and wiring in the groove. With recent miniaturization, the grooves are configured to have a high aspect ratio. [0004] When forming a coating etc., it is desired to form a film with good step coverage without variation in film thickness even on the upper side, middle side, lower side, and bottom of the groove. This is because, by form...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/67H01L21/22
CPCC23C16/4408C23C16/4412C23C16/45523C23C16/45565C23C16/4557C23C16/45582C23C16/4586C23C16/46H01J37/32357H01J37/3244H01J37/32449H01J37/32522H01J37/32834H01J37/32853H01J37/32862H01L21/28512H01L21/76877H01L21/02263
Inventor 西堂周平
Owner KOKUSAI DENKI KK