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Method for increasing near-infrared band absorptivity of vanadium oxide thin film and vanadium oxide thin film prepared therefrom

A vanadium oxide thin film, near-infrared technology, applied in the field of physical electronics, can solve the problem of high control difficulty and achieve the effect of stable near-infrared transmittance

Inactive Publication Date: 2016-09-21
NANJING UNIV OF SCI & TECH
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Problems solved by technology

However, the above methods all have certain deficiencies and limitations, such as refractive index thickness matching is suitable for low dispersion materials, while vanadium oxide is a strong dispersion material; impurity concentration and doping process control in the doping method is difficult; texture or light trapping The structure is yet to be further verified by experiments

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  • Method for increasing near-infrared band absorptivity of vanadium oxide thin film and vanadium oxide thin film prepared therefrom
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  • Method for increasing near-infrared band absorptivity of vanadium oxide thin film and vanadium oxide thin film prepared therefrom

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[0022] In order to better understand the technical content of the present invention, specific embodiments are given together with the attached drawings for description as follows.

[0023] Aspects of the invention are described in this disclosure with reference to the accompanying drawings, which show a number of illustrated embodiments. Embodiments of the present disclosure are not necessarily intended to include all aspects of the invention. It should be appreciated that the various concepts and embodiments described above, as well as those described in more detail below, can be implemented in any of numerous ways, since the concepts and embodiments disclosed herein are not limited to any implementation. In addition, some aspects of the present disclosure may be used alone or in any suitable combination with other aspects of the present disclosure.

[0024] According to a preferred embodiment of the present invention, a method for increasing the near-infrared band absorpti...

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Abstract

The invention provides a method for improving absorption rate of a near infrared band of a vanadium oxide film. The method for improving the absorption rate of the near infrared band of the vanadium oxide film includes following steps: forming a plurality of cylindrical units which are arranged in a spare shape on the surface of the vanadium oxide film through one method among chemical corrosion, photo etching and impressing methods, forming photonic crystal structures staggered according to refractive indexes between the arrangement structure of the plurality of the cylindrical units and air, coupling incident waves into a Bloch wave mode in a plane by using coupling of a periodic structure for the incident waves, and thereby improving the light absorption rate of the vanadium oxide film on the near infrared band. Compared with a vanadium oxide film not in the photonic crystal periodic structure, the absorption rate of the vanadium oxide film prepared through the method for improving the absorption rate of the near infrared band of the vanadium oxide film is obviously higher than the vanadium oxide film not in the photonic crystal periodic structure in the wave band from 700nm to 1700nm.

Description

technical field [0001] The invention relates to the technical field of physical electronics, in particular to a method for increasing the near-infrared band absorptivity of a vanadium oxide thin film and a vanadium oxide thin film prepared therefrom. Background technique [0002] The thermal radiation detector is a component that detects radiation through thermal effects. Its basic working method is: according to the temperature change after the infrared detection component absorbs infrared radiation, measure the physical properties of the sensitive component caused by the temperature change (such as size, resistance, Resonant frequency, etc.) to detect infrared radiation. Thermal radiation detectors do not require refrigeration equipment and can work at room temperature. They have obvious advantages in low cost, low power consumption, miniaturization and reliability. They have become a research hotspot and have shown great promise. Market potential. [0003] In order to i...

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G02B1/111G02B1/00
CPCG02B1/12G02B5/003
Inventor 洪玮王哲顾国华陈钱
Owner NANJING UNIV OF SCI & TECH
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