Manufacturing method of semiconductor device
A manufacturing method and semiconductor technology, applied in the direction of semiconductor devices, etc., can solve problems such as detachment, poor adhesion between silicon nitride layer and metal tungsten, and failure of semiconductor devices
Active Publication Date: 2017-12-05
SEMICON MFG INT (SHANGHAI) CORP
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Problems solved by technology
However, the adhesion between the silicon nitride layer and the metal tungsten is poor. During the CMP process of the silicon nitride layer, the silicon nitride layer is easily delaminated with the metal tungsten and detached from the groove.
In this way, subsequently formed contact holes, if misaligned, may bridge with the tungsten gate, resulting in failure of the semiconductor device
Method used
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[0020] Next, the present invention will be described more fully with reference to the accompanying drawings, in which embodiments of the invention are shown. However, this invention may be embodied in different forms and should not be construed as limited to the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the scope of the invention to those skilled in the art. In the drawings, the size and relative sizes of layers and regions may be exaggerated for clarity. Like reference numerals refer to like elements throughout.
[0021] It will be understood that when an element or layer is referred to as being "on," "adjacent," "connected to" or "coupled to" another element or layer, it can be directly on the other element or layer. A layer may be on, adjacent to, connected to, or coupled to other elements or layers, or intervening elements or layers may be present. In contrast, when a...
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Abstract
The invention discloses a method for manufacturing a semiconductor device. The method includes: a) providing a semiconductor substrate on which a tungsten gate structure is formed, and the tungsten gate structure is surrounded by an interlayer dielectric layer b) etching back a part of the tungsten gate structure to form a groove above the tungsten gate structure; c) forming a cap layer on the interlayer dielectric layer and in the groove, The cap layer fills the groove; d) forming a protective layer on the cap layer; and e) removing the protective layer and the cap layer outside the groove by chemical mechanical polishing. The method provided by the invention can protect the cap layer by forming the protective layer, and avoid delamination of the cap layer and the tungsten gate structure during chemical mechanical polishing.
Description
technical field [0001] The present invention relates to the technical field of semiconductors, in particular to a method for manufacturing a semiconductor device. Background technique [0002] As the size of semiconductor devices becomes smaller and smaller, the size of the gate structure is also reduced accordingly. When the size of a semiconductor device is smaller than 0.1 μm, it is usually necessary to use a metal gate (such as an aluminum gate) instead of a polysilicon gate. When the size of the semiconductor device is further reduced, such as less than 20nm technology node, due to the gap filling capability of tungsten and the needs of semiconductor devices, tungsten gates are usually used instead of aluminum gates. [0003] Another problem brought about by the further reduction in the size of semiconductor devices is that the contact holes made in the self-alignment mode are also difficult to align. If this happens, the contact hole is likely to be bridged with the ...
Claims
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IPC IPC(8): H01L21/28
Inventor 蒋莉
Owner SEMICON MFG INT (SHANGHAI) CORP