Semiconductor device with recombination region

Abstract

A semiconductor device includes a drift region in a semiconductor body. A charge carrier transfer region forms a pn junction with a drift region in the semiconductor body. A control structure electrically connects the recombination region to the drift region during the desaturation period and disconnects the recombination region from the drift region outside of the desaturation period. The recombination region reduces charge carrier plasma in the drift region during the desaturation period and reduces reverse recovery losses so that no adverse blocking characteristics result.

Description

technical field [0001] The invention belongs to the field of semiconductors, in particular to a semiconductor device with a composite region. Background technique [0002] Semiconductor devices such as semiconductor diodes, IGFETS (Insulated Gate Field Effect Transistors) and IGBTS (Insulated Gate Bipolar Transistors) include pn junctions. When the pn junction is forward biased, mobile charge carriers fill the semiconductor regions on both sides of the pn junction. At least one of these regions is formed as a drift region with a relatively low impurity concentration and a relatively large extension in the direction of current flow, which charge carries The current flow can form a charge carrier plasma that must be removed from the drift layer. Removing the charge carrier plasma from the drift region is known as reverse recovery and contributes to the dynamic switching losses of semiconductor devices. There is an urgent need to provide semiconductor devices with improved s...

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Problems solved by technology

Removal of the charge carrier plasma from the drift region is known as reverse recovery and contributes to the dynamic switching losses of semiconductor devices

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