Formation method of contact hole
A technology of contact holes and dielectric layers, which is applied in electrical components, semiconductor/solid-state device manufacturing, circuits, etc., can solve problems affecting tungsten filling ability and chip electrical performance, so as to improve filling ability, reduce device failure, and improve performance Effect
Active Publication Date: 2018-05-29
SHANGHAI HUALI MICROELECTRONICS CORP
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Problems solved by technology
This will seriously affect the filling ability of the subsequent tungsten, so that the tungsten will be preferentially closed at the top of the contact hole, and there are still gaps in the contact hole, such as image 3 As shown, this structure will seriously affect the electrical performance of the chip and is one of the main defects of chip failure.
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[0029] See also Figure 4A to Figure 4F , The method for forming a contact hole of this embodiment includes the following steps:
[0030] Step 1. Provide a substrate of a semiconductor device to be made with contact holes, from Figure 4A It can be seen that the semiconductor device in this embodiment has been formed with three gates, P-well and N-well, and three contact holes need to be made to contact the three gates.
[0031] Step 2, sequentially form CESL layer 11 and SiO on the substrate 2 Layer 12, dielectric layer 13, APF layer 14, anti-reflection layer 15 and photoresist 16, such as Figure 4A Shown. Among them, the anti-reflection layer of this embodiment includes a lower NF-DARC layer and an upper BARC layer. The NF-DARC nitrogen-free dielectric anti-reflection layer is used as the anti-reflection layer and the hard mask when etching APF. The bottom of the BARC The anti-reflective layer is used with photoresist. Among them, in this step, the deposition, deposition, and c...
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The invention discloses a contact hole forming method. A medium layer is added between a silicon dioxide layer and an APF layer, a round corner is formed after the top corner, on the top of a contact hole deep groove, of the medium layer is rounded through a corner rounding process after the contact hole deep groove is formed, the round corner is transferred to the top of the silicon dioxide layer after the medium layer is removed subsequently, and a contact hole which is finally formed comprises the round corner top. Thus, in the subsequent tungsten filling process, the top of the contact hole can not be sealed too early, the tungsten filling capacity is improved, and therefore the performance of devices is improved, and the possibility that the devices lose efficacy is lowered.
Description
Technical field [0001] The present invention relates to the technical field of semiconductor manufacturing, in particular to a method for forming contact holes. Background technique [0002] The semiconductor manufacturing process is rapidly entering the 22nm node era. Due to the reduction of key dimensions, the contact holes formed in semiconductor devices are getting smaller and smaller. Traditional aluminum metal can no longer be deposited in the contact holes. Therefore, people use tungsten instead of aluminum to make metal interconnections. Tungsten has better gap filling (trench filling) capabilities. [0003] However, as the key size of the contact hole becomes smaller and smaller, the tungsten filling process after the contact hole is etched becomes more and more difficult. The main reason is that the top of the contact hole is easier to accumulate during the filling process of tungsten. Thicker tungsten, as the key size of the contact hole becomes smaller and smaller, it...
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IPC IPC(8): H01L21/768
CPCH01L21/768H01L21/76832H01L21/76877
Inventor 黄海黄君盖晨光
Owner SHANGHAI HUALI MICROELECTRONICS CORP