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Chemical mechanical polishing method and chemical mechanical polishing device

A technology of chemical mechanics and grinding methods, which is applied in the direction of grinding devices, grinding machine tools, abrasive surface adjustment devices, etc., and can solve the problems of unsatisfactory grinding effect of grinding pads, etc.

Active Publication Date: 2017-03-22
SEMICON MFG INT (SHANGHAI) CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0006] The object of the present invention is to provide a chemical mechanical polishing method and a chemical mechanical polishing device to solve the problem that the polishing effect of the polishing pad is not ideal at the end of use

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  • Chemical mechanical polishing method and chemical mechanical polishing device

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Embodiment Construction

[0023] As mentioned in the background art, many consumables are often used in the semiconductor manufacturing process, such as the polishing pad used in the chemical mechanical polishing process, and there is always a PM Cycle effect in the use of the polishing pad, which is specifically manifested in The remaining thickness of the film after grinding at the initial stage of the use of the polishing pad is lower than the target thickness, and at the end of the use of the polishing pad, the remaining thickness of the film after grinding is higher than the target thickness, which in turn affects the stability of the process and the performance of the product. Therefore, after the PM is replaced with a new polishing pad, use the spacer for pre-grinding to reduce the PM Cycle effect, but there is no way to solve it later, so that the use time of the polishing pad can only be shortened to reduce this effect. This is because the existing chemical mechanical polishing device relies on...

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Abstract

The invention provides a chemical mechanical grinding method and a chemical mechanical grinding device. The pressure of a grinding pad leveler is adjusted in real time according to the service life of a grinding pad; and the service life of the grinding pad is longer, the pressure of the grinding pad lever is higher, so that the stability of grinding removal rate is guaranteed, the residual thickness stability of films after a CMP process is finally guaranteed, and the residual thickness stability of the films between products and the final chip performance stability are improved.

Description

technical field [0001] The invention relates to the technical field of integrated circuit manufacturing, in particular to a chemical mechanical polishing method and a chemical mechanical polishing device. Background technique [0002] With the rapid development of ultra-large-scale integrated circuits, the manufacturing process of integrated circuits has become more and more complex and sophisticated. In order to improve integration and reduce manufacturing costs, the size of semiconductor devices is decreasing day by day, and it is difficult for planar wiring to meet the high-density distribution of semiconductor devices. Requirements, only multi-layer wiring technology can be used to further increase the integration density of semiconductor devices. Due to the deposition process of multi-layer interconnection or relatively large filling depth, the wafer surface is excessively undulating, which causes difficulties in focusing the lithography process, weakens the control abi...

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): B24B37/10B24B53/017
CPCB24B37/10B24B37/34B24B53/017
Inventor 张芳余
Owner SEMICON MFG INT (SHANGHAI) CORP