Calibrating method and device for mass flow controller

A technology of mass flow and calibration method, applied in the direction of using electric device flow control, etc., can solve problems such as large error in MFC calibration results

Active Publication Date: 2015-07-01
BEIJING NAURA MICROELECTRONICS EQUIP CO LTD
View PDF11 Cites 18 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0010] The technical problem to be solved by the embodiments of the present invention is to provide a cal

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Calibrating method and device for mass flow controller
  • Calibrating method and device for mass flow controller
  • Calibrating method and device for mass flow controller

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0085] In order to make the above objects, features and advantages of the embodiments of the present invention more comprehensible, the embodiments of the present invention will be further described in detail below in conjunction with the accompanying drawings and specific implementation methods.

[0086] refer to figure 1 , shows a flow chart of the steps of an embodiment of a method for calibrating a mass flow controller in an embodiment of the present invention, the mass flow controller may be set in a semiconductor device, and the mass flow controller may be set with a The set flow rate of the incoming gas, such as figure 1 As shown, the method may specifically include the following steps:

[0087] Step 101, when the chamber is filled with gas, collect the air pressure of the chamber;

[0088] It should be noted that the semiconductor device can be atmospheric pressure chemical vapor deposition (Atmospheric Pressure Chemical Vapor Deposition, APCVD), chemical vapor depos...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

The invention provides a calibrating method and device for a mass flow controller (MFC). The mass flow controller is installed in a semiconductor device, and set flow for feeding gas is set in the mass flow controller. The method comprises the steps: while the gas is fed into the chamber, collecting the gas pressure of the chamber; according to the gas pressure of the chamber, calculating the actual flow of the gas; calculating the difference between the actual flow and the set flow; while the difference exceeds the preset difference threshold, judging that the mass flow controller does not meet the specification; otherwise, judging that the mass flow controller meets the specification. The method and device are capable of avoiding the switching between the technology specification and the chamber specification in the process of collecting the chamber gas pressure, solving the problem that the MFC calibration result difference is larger because the measure value difference caused by the switching between the technology specification and the chamber specification in the process of collecting the chamber gas pressure is large, and improving the accuracy of the MFC calibration.

Description

technical field [0001] The invention relates to the technical field of semiconductor process control, in particular to a calibration method for a mass flow controller and a calibration device for a mass flow controller. Background technique [0002] The production process of semiconductor involves the reaction of gas and semiconductor substrate, and the flow rate of gas will have an important impact on the process result. Therefore, in order to achieve a high yield rate of the produced semiconductor, it is necessary to precisely control the flow rate of the gas flowing into the chamber. Especially with the continuous improvement of semiconductor process integration, the error requirements for gas flow are also further improved, and moreover, users also have certain requirements for MFC itself. [0003] Among them, a mass flow controller (Mass Flow Controller, MFC) is a device for precise measurement and control of gas flow. During the routine maintenance of the MFC, it is ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
IPC IPC(8): G05D7/06
Inventor 陈鹏飞
Owner BEIJING NAURA MICROELECTRONICS EQUIP CO LTD
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap