n-type buried layer covered semi-superjunction lateral double-diffused metal oxide semiconductor field effect transistor

Abstract

An N type buried layer cover type semi super junction transverse double diffusion metal oxide semiconductor field effect tube is disclosed. The invention discloses a novel SJ- LDMOS device. A semi super junction is manufactured on a P type epitaxial layer, and N type buried layers are introduced on a semi super junction area and some epitaxial films. Compared with a traditional SJ-LDMOS, according to the N type buried layer cover type semi super junction transverse double diffusion metal oxide semiconductor field effect tube of the invention, through the effect of the N type buried layers, the load imbalance between an N type column area and a P type column area in a super junction is compensated, a substrate assistant effect is overcome, breakdown voltage is raised, due to a semi super junction, an electric field peak is introduced at the surface, and the breakdown voltage is raised further. At the same time, a new conductive path is added outside the N type buried layers, and the specific on-resistance is reduced. The characteristic of the structure is the balance of high breakdown voltage, low conduction resistance and super junction layer load. The invention provides the novel SJ-LDMOS device has the characteristics of relatively simple fabrication process and low processing difficulty. The application requirement of a power electronic system is satisfied.

Description

technical field [0001] The invention relates to the technical field of semiconductor power devices, in particular to a semi-superjunction lateral double-diffused metal oxide semiconductor field effect transistor. Background technique [0002] The lateral power semiconductor device LDMOS (Lateral Double-diffused MOSFET) is characterized by a lateral channel, while the gate, source and drain are all on the same side of the chip, which is easy to integrate with low-voltage signals through internal connections. The advantages of frequency characteristics, gain, linearity, and switching performance have become the key to realizing the core technologies that lead to the second electronic revolution: PIC (Power Integrated Circuit) and HVIC (High Voltage Integrated Circuit). [0003] The super junction (super junction) structure is alternately arranged N-type pillar regions and P-type pillar regions. If the super junction structure is used to replace the drift region of LDMOS, a sup...

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Problems solved by technology

[0004] However, for SJ-LDMOS, due to the substrate-assisted depletion of the N-type pillar region (or P-type pillar region), the P-type pillar region (or N-type pillar region) cannot be completely depleted when the device breaks down, breaking the N-type pillar region. The charge balance between the column area and the P-type column area reduces the lateral breakdown voltage of the SJ-LDMOS device

[0005] The semi-super junction, that is, the super junction region occupies half or part of the drift region. Compared with the ordinary super junction, an electric field peak is added to increase the breakdown voltage, but there is also the same substrate-assisted effect as the ordinary super junction. defect

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