Image Sensors Having Deep Trenches Including Negative Charge Material And Methods Of Fabricating The Same

An image sensor, deep trench technology, applied in the field of image sensors, can solve problems such as pixel crosstalk

Active Publication Date: 2015-09-02
SAMSUNG ELECTRONICS CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Therefore, the corresponding pixels are scaled down

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  • Image Sensors Having Deep Trenches Including Negative Charge Material And Methods Of Fabricating The Same
  • Image Sensors Having Deep Trenches Including Negative Charge Material And Methods Of Fabricating The Same
  • Image Sensors Having Deep Trenches Including Negative Charge Material And Methods Of Fabricating The Same

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Embodiment Construction

[0041] Some embodiments of aspects will be described more fully hereinafter with reference to the accompanying drawings in which some embodiments are shown. However, inventive concepts may be embodied in many different forms and should not be construed as limited to the few embodiments set forth herein. Rather, these described some embodiments are provided so that this description will be thorough and complete, and will fully convey the scope of the inventive concept to those skilled in the art. In the drawings, the size and relative sizes of layers and regions may be exaggerated for clarity.

[0042] It will be understood that when an element or layer is referred to as being "on," "connected to," or "coupled to" another element or layer, it can be directly on the other element or layer. or layer, directly connected to or directly bonded to another element or layer, or intervening elements or layers may be present. In contrast, when an element is referred to as being “direct...

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Abstract

Image sensors are provided including a substrate defining a plurality of pixel regions, the substrate having a first surface and a second surface opposite the first surface. The second surface of the substrate is configured to receive light incident thereon and the substrate defines a deep trench extending from the second surface of the substrate toward the first surface substrate and separating the plurality of pixel regions from each other. In each of the plurality of pixel regions of the substrate, a photoelectric conversion region is provided. A gate electrode is provided on the photoelectric conversion region and a negative fixed charge layer covering the second surface of the substrate and at least a portion of a sidewall of the deep trench is also provided. The image sensors further include a shallow device isolation layer on the first surface of the substrate. The shallow device isolation layer defines an active region in each of the pixel regions and the negative fixed charge layer contacts the shallow device isolation layer.

Description

[0001] This patent application claims priority from Korean Patent Application No. 10-2014-0023278 filed on February 27, 2014, the entire contents of which are hereby incorporated by reference. technical field [0002] The inventive concept relates generally to image sensors, and more particularly, to image sensors and methods of manufacturing image sensors. Background technique [0003] Image sensors are semiconductor devices that convert electrical signals into optical images. Image sensors may be classified into various types including a Charge Coupled Device (CCD) type and a Complementary Metal Oxide Semiconductor (CMOS) type. A CMOS type image sensor (ie, referred to as a CIS) may include pixels arranged two-dimensionally. Each pixel may include a photodiode (PD) that converts incident light into an electrical signal. [0004] As semiconductor devices become more highly integrated, image sensors will likewise become more highly integrated. Accordingly, the correspondi...

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Application Information

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IPC IPC(8): H01L27/146H01L21/82
CPCH01L27/14638H01L27/14605H01L27/14689H01L27/14614H01L27/14621H01L27/14627H01L27/1463H01L27/1464H01L27/14685H01L27/14687
Inventor 井原久典
Owner SAMSUNG ELECTRONICS CO LTD
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