Capacitance coupling type plasma processing apparatus

Abstract

The invention, which belongs to the technical field of plasma processing, discloses a capacitance coupling type plasma processing apparatus. According to the invention, a plasma jet discharge array arranged at the top of a processing cavity contains a high-voltage electrode, a barrier medium flat plate, and a work air-flow channel layer. The barrier medium flat plate includes a meta-material base material layer and metal wire structure units attached to the meta-material substrate layer. Under the circumstances that the base material is selected and determined, a needed modulation effect can be obtained by changing the patterns and designed dimensions of the metal wire structure units and/or arrangement of the metal wire structure units in space, thereby changing electromagnetic parameters epsilon and mu of each unit in the space where the meta-material is located. An equivalent electromagnetic parameter of each point in the space is designed and the equivalent capacitance is also obtained correspondingly, thereby obtaining a response frequency of each metal wire structure unit and thus precisely controlling modulation of each point in the space where the meta-material is located. Therefore, diversified precise controlling of the plasma density distribution is realized.

Description

technical field [0001] The invention relates to the technical field of plasma processing, in particular to a capacitively coupled plasma processing device. Background technique [0002] Generally, in a capacitively coupled plasma processing apparatus, at least a part of the wall of the processing container, such as the ceiling, is formed of a dielectric window, and high-frequency power is supplied to a high-voltage electrode provided outside the dielectric window. The processing container is formed as a decompressible vacuum chamber, a substrate to be processed is arranged in the center of the chamber, and a processing gas is introduced into a processing space provided between the dielectric window and the substrate. Since the high-frequency AC magnetic field generated by the high-frequency current of the high-voltage electrode through the processing space in the chamber changes with time, an electric field is generated in the azimuth direction of the processing space, and t...

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Problems solved by technology

[0003] However, plasma has the property of deviating from thermodynamic equilibrium. One is that the instability caused by the macroscopic parameters of the plasma changes the overall shape of the plasma, and the other is the instability caused by the deviation of the velocity spatial distribution function of the plasma from the Maxwell distribution.

Instabilities in the plasma can lead to the escape of charged particles or an abnormal increase in the transport coefficient, breaking the confinement of the plasma or limiting the confinement time

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