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Inductive coupling type plasma processing apparatus

A plasma and processing device technology, applied in the field of plasma processing, can solve the problems of plasma shape change, instability, plasma velocity spatial distribution function deviation, etc., to improve controllability, increase stability, and solve uniformity problems Effect

Inactive Publication Date: 2015-09-16
山东专利工程总公司
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  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] However, plasma has the property of deviating from thermodynamic equilibrium. One is that the instability caused by the macroscopic parameters of the plasma changes the overall shape of the plasma, and the other is the instability caused by the deviation of the velocity spatial distribution function of the plasma from the Maxwell distribution.
Instabilities in the plasma can lead to the escape of charged particles or an abnormal increase in the transport coefficient, breaking the confinement of the plasma or limiting the confinement time

Method used

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Embodiment 1

[0038] like figure 1 As shown, an inductively coupled plasma processing device according to an embodiment of the present invention is an inductively coupled plasma device using a planar coil radio frequency antenna, and includes a vacuum processing chamber 10 made of metal such as aluminum or stainless steel. 10 is safely grounded.

[0039] The top of the processing chamber 10 is airtightly installed with a metamaterial top plate 52 made of metamaterial. The processing chamber 10 is provided with a mounting table 12 made of conductive material (such as aluminum with anodized surface) for mounting the substrate to be processed, and the mounting table 12 doubles as a high-frequency electrode; The substrate W on the stage 12 is attracted and held by the electrostatic chuck. The mounting platform 12 is accommodated in the insulating frame 14, and the insulating frame 14 is supported by a hollow pillar 33; the bottom end of the pillar 33 is located outside the processing chamber ...

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Abstract

The invention, which belongs to the technical field of plasma processing, discloses an inductive coupling type plasma processing apparatus. A meta-material top board is employed by a processing cavity and contains a base material layer and metal wire structure units attached to the base material layer. Under the circumstances that the base material is selected and determined, a needed modulation effect can be obtained by changing the patterns and designed dimensions of the metal wire structure units and / or arrangement of the metal wire structure units in space, thereby precisely controlling modulation of each point in meta-material space and thus obtaining needed modulation. Moreover, a meta-material protruding part is arranged at the meta-material top board; and induced magnetic fields stronger than the combined magnetic field are respectively formed right below the inner side coil, the intermediate coil and the outer side coil of the RF antenna. For plasmas generated at corresponding positions at the inner side coil, the intermediate coil and the outer side coil, the strengths of the plasmas can be controlled by the power of the exerted RF for excitation, so that controlling of the plasmas inside the processing cavity is obviously improved.

Description

technical field [0001] The invention relates to the technical field of plasma processing, in particular to an inductively coupled plasma processing device. Background technique [0002] Generally, in an inductively coupled plasma processing apparatus, a dielectric window constitutes at least a part of the wall of the processing container, such as the top, and high-frequency power is supplied to a coil-shaped RF antenna provided outside the dielectric window. The processing container is formed as a decompressible vacuum chamber, a substrate to be processed is arranged in the center of the chamber, and a processing gas is introduced into a processing space provided between the dielectric window and the substrate. Since a high-frequency current flows in the RF antenna, the magnetic field lines penetrate the dielectric window and generate a high-frequency AC magnetic field passing through the processing space in the chamber around the RF antenna. Since the AC magnetic field chan...

Claims

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Application Information

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IPC IPC(8): H05H1/46
Inventor 于凌崧王婷邢云翮庄文
Owner 山东专利工程总公司
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