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A kind of preparation method of copper interconnection

A technology of copper interconnection and copper metal, which is applied in semiconductor/solid-state device manufacturing, electrical components, circuits, etc., and can solve the problems of increased resistance of copper interconnection

Active Publication Date: 2018-03-23
SHANGHAI HUALI MICROELECTRONICS CORP
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Since the entire fill metal is alloyed copper, the resistance of copper interconnects also increases significantly

Method used

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  • A kind of preparation method of copper interconnection
  • A kind of preparation method of copper interconnection
  • A kind of preparation method of copper interconnection

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Embodiment Construction

[0038] In order to make the content of the present invention clearer and easier to understand, the content of the present invention will be further described below in conjunction with the accompanying drawings. Of course, the present invention is not limited to this specific embodiment, and general replacements known to those skilled in the art are also covered within the protection scope of the present invention.

[0039] In the preparation method of the copper interconnection of the present invention, the first planarization process is used to grind the top of the metal copper to reduce the distance of subsequent diffusion of dopant elements to the position of the metal copper that is flush with the top of the groove, and the dopant formed on the surface of the metal copper is utilized. The dopant layer is annealed to form an alloy copper layer on the top of the metal copper, and then the dopant layer is removed, and then the second planarization process is used to remove the...

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Abstract

The invention provides a preparation method of interconnect copper. The top of metal copper is ground to be leveled with a copper seed layer or diffusion barrier layer in a first planarization technology, a doping agent layer formed at the surface of metal copper is annealed to form an alloy copper layer at the top of the metal copper, the doping agent layer is removed, and the copper seed layer or the diffusion barrier layer and the planar alloy copper layer are removed in a second planarization technology. Thus, the diffusion route of doping-agent elements to the copper metal, leveled with the top of a groove, in the annealing process is reduced, the formed alloy metal layer is placed at the surface of the metal copper, the problem that most or even the whole of present alloy metal layer exists in the seed layer and caused increased resistance of the metal copper, and the electromigration performance of the interconnect copper is substantially improved without increase of resistance.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to a method for preparing copper interconnections. Background technique [0002] In the field of integrated circuits, in order to improve the electromigration characteristics of copper interconnection, the mainstream copper interconnection process in the industry includes: step L01: depositing an alloy seed layer (alloy seed layer) in the trench; step L02: performing copper electroplating on the Metal copper is formed in the groove; step L03: planarize the surface of the metal copper and anneal the metal copper, and form an alloy copper layer on the metal copper surface; step L04: cover the dielectric barrier layer on the alloy copper layer. [0003] In the above process, since a large amount of alloying elements remain in the seed layer, the resistance of the formed copper interconnection will be significantly increased. The main purpose of improving the electrical mobility...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/768
CPCH01L21/7684
Inventor 鲍宇周军朱亚丹
Owner SHANGHAI HUALI MICROELECTRONICS CORP