Multifunctional crystal grain spot measurement circuit structure of spot measurement machine

Abstract

The application, which relates to the semiconductor testing field, provides a multifunctional crystal grain spot measurement circuit structure of a spot measurement machine. With the multifunctional crystal grain spot measurement circuit structure, demands of different chip tests can be satisfied; switching among a vertical-structure-based chip, a horizontal-structure-based chip, a low-power chip, and a high-power chip can be realized conveniently; and universality of the spot measurement machine can be improved. According to the technical scheme, a crystal grain detection power supply device includes two leading-out terminals for detecting two electrodes of a crystal grain; the first leading-out terminal is connected to first electrode probe devices; and the second leading-out terminal is connected to a selection switching device. Two selection outputs of the switching device are respectively connected with a work bench and a crystal grain second electrode probe device. The first leading-out terminal is connected with at least two crystal grain first electrode probe devices connected in parallel and the two probe devices are connected by a switch; when the switch is in an on state, the two crystal grain first electrode probe devices are connected in parallel.

Description

technical field [0001] The application relates to a spot testing machine for semiconductor testing, in particular to testing of LED chips. Background technique [0002] The LED grains need to be tested by a point measuring machine to obtain their photoelectric parameters, and the LED grains are sorted according to the photoelectric parameters. [0003] The spot testing machine currently used to test silicon substrate LED chips includes a probe part, a grain detection power supply unit, and a workbench. See figure 1 As shown, the front box includes a power supply device for grain detection, the front box is connected to the electrostatic generator (ie, the electrostatic box), and the two ports N port and P port of the front box are respectively connected to the probe device and the workbench. Due to the vertical structure of the silicon substrate LED grain and the conductive characteristics of the workbench itself, the grain is placed on the workbench, and the probe can form...

AI Technical Summary

Problems solved by technology

[0005] The point measuring machine used to manufacture silicon substrate LEDs cannot be used in common with the point measuring machine used to manufacture sapphire substrate LEDs. If the type of substrate is changed, the point measuring machine needs to be modified, which is very inconvenient

[0006] For high-power LED chips, multiple probes are usually required to detect chips, and the equipment used to detect high-power chips cannot be directly used to detect small chips, and the equipment has poor versatility.

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