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Sensor device and sensor arrangement

A sensor device and sensor technology, applied in the direction of converting sensor output, measuring device, manufacturing/processing of electromagnetic device, etc., can solve problems such as asymmetrical sensing or detection quality

Inactive Publication Date: 2018-03-02
INFINEON TECH AG
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] Unfortunately, in many cases vertical Hall sensor structures are equally asymmetric with respect to their transport properties and thus with respect to their sensing or detection qualities

Method used

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  • Sensor device and sensor arrangement
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  • Sensor device and sensor arrangement

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Experimental program
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Embodiment Construction

[0023] Hereinafter, the embodiments will be described in more detail. In this context, collective reference symbols will be used to describe several objects simultaneously or to describe common features, dimensions, properties, etc. of these objects. Aggregated reference symbols are based on their individual reference symbols. Also, objects that appear in several embodiments or several drawings but are the same or at least similar with respect to at least some of their functions or structural features will be marked with the same or similar reference symbols. To avoid unnecessary repetition, parts of the description referring to such objects also relate to corresponding objects in different embodiments or in different figures, unless explicitly or (considering the context of the description and figures) implicitly state otherwise. Thus, similar or related objects may be implemented with at least some of the same or similar features, dimensions and characteristics, but may als...

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Abstract

The invention relates to sensor devices and sensor arrangements. A vertical Hall sensor structure according to an embodiment includes a Hall effect region arranged between a first interface and a second interface of the Hall effect region, a first contact, a second contact, a third contact and a fourth contact contacts, the first, second, third and fourth contacts are closer to the first interface than to the second interface and are in contact with the Hall effect region, wherein the resistance between the first and second contacts is substantially equal to the resistance between the third and second contacts, a conductive layer closer to the second interface than to the first interface and in contact with the Hall effect region, the conductive layer comprising a higher conductivity than the Hall effect region , wherein the resistance between the fourth contact and the conductive layer is lower than the resistance between the second contact and the conductive layer.

Description

technical field [0001] Embodiments relate to vertical Hall sensor structures, vertical Hall sensor devices and methods. Background technique [0002] In many applications, components and systems, magnetic fields are used for different purposes. For example, magnetic fields may be used to store information, transmit information, manipulate components, detect the position or orientation of objects, and other purposes, just to name a few. For detecting magnetic fields, suitable magnetic sensor structures can be used. Among those magnetic sensor structures, the Hall sensor structure represents a sensor structure that offers the possibility of easy implementation into an integrated circuit, since the fabrication process for producing the Hall sensor structure can be compared to that used to fabricate the sensor integrated into a die or substrate. Fabrication processes for integrated structures are similar and generally compatible. [0003] The Hall sensor structure employs the...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L43/06H01L43/04H10N50/80H10N52/00H10N52/01H10N52/80
CPCH10N52/80H10N52/101G01R33/077H10N52/01G01D5/145G01R33/07
Inventor U.奥瑟莱希纳
Owner INFINEON TECH AG