An enhanced hemt with integrated sbd

An enhanced, U-shaped technology, applied in the direction of electrical components, electric solid devices, circuits, etc., can solve the problems of difficult balance of performance, single function of devices, hindering the development of GaN devices and circuits, etc., to achieve protection of devices and circuits, high resistance The effect of breaking the voltage

Active Publication Date: 2018-08-14
UNIV OF ELECTRONICS SCI & TECH OF CHINA
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0005] In addition, there are still many problems hindering the development of GaN devices and circuits, such as the difficulty of realizing enhanced devices with better performance, the slow development of simple integrated devices, the single function of devices and their different performances but difficult to balance, etc.

Method used

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  • An enhanced hemt with integrated sbd
  • An enhanced hemt with integrated sbd
  • An enhanced hemt with integrated sbd

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Embodiment Construction

[0035] Below in conjunction with accompanying drawing, describe technical scheme of the present invention in detail:

[0036]According to the principle that the MOS structure forms a strong inversion layer on the surface of the semiconductor layer and modulates the thickness of the Schottky contact barrier under the modulation of the gate voltage to make the source electrons easier to tunnel, the groove gate is formed by using a self-alignment process. As well as different work function metal deposition techniques, an enhanced AlGaN / GaN HEMT device with integrated Schottky barrier diode (SBD) is realized.

[0037] A kind of enhanced HEMT integrated SBD of the present invention, such as figure 1 As shown, it includes a substrate 1, a buffer layer 2 positioned on the upper surface of the substrate, and a barrier layer 3 positioned on the upper surface of the buffer layer 2, and the buffer layer 2 and the barrier layer 3 form a heterojunction; the barrier layer 3 One side of the...

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Abstract

The invention belongs to the technical field of semiconductors, and in particular relates to an enhanced HEMT integrating SBD. In the present invention, the source is a Schottky contact rather than an ohmic contact of a general device, and the source is divided into two parts, one part is formed of source metal to provide higher voltage blocking capability, and the other part is formed of metal, with In order to provide better current transport capability and reduce the gate voltage required to form the inversion layer of the wide bandgap semiconductor under the gate dielectric, and improve the stability, while reducing the difficulty of implementation, in addition, when the source voltage is positive, the drain When the voltage is negative, the device forms an SBD with rectification capability. When the device is used in an inductive load circuit, the reverse current in the inductive load is discharged from the integrated SBD path at the moment of turn-off, which protects the device and the entire circuit. , improve device and circuit stability.

Description

technical field [0001] The invention belongs to the technical field of semiconductors, and in particular relates to an enhanced HEMT (high electron mobility transistor) integrated with a SBD (Schottky diode). Background technique [0002] As a typical representative of compound semiconductors, III-V compound semiconductor gallium nitride (GaN) has become one of the most promising third-generation semiconductors. GaN has many excellent electrical properties, such as: high electron mobility, high two-dimensional electron gas (2DEG) concentration, etc. In addition, gallium nitride (GaN) materials have stable chemical properties, high temperature resistance, and corrosion resistance, and have inherent advantages in high-frequency, high-power, and radiation-resistant applications, so they have developed rapidly in the past ten years. [0003] In terms of realizing enhanced device functions, technologies such as P-type cap layer structure, grooved gate structure, and F ion implan...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L27/06H01L29/778H01L29/417H01L29/47
Inventor 陈万军王泽恒刘丽胡官昊李建周琦张波
Owner UNIV OF ELECTRONICS SCI & TECH OF CHINA
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