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Composite transparent conductive oxide film and preparation method thereof

An oxide thin film, transparent and conductive technology, applied in circuits, electrical components, semiconductor devices, etc., can solve the problems of single functionalization, can not meet the requirements of diversified performance of solar front electrode coatings, etc., achieve high chemical stability, Stable physical properties and strong adhesion

Active Publication Date: 2017-04-12
48TH RES INST OF CHINA ELECTRONICS TECH GROUP CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

The functionalization of the solar cell front electrode coating in the prior art is single, such as: TiO 2 , SnO 2 , SiO 2 、SiN x , ITO and MgF 2 Thin films, etc., cannot meet the requirements of the development of photovoltaic technology for the diversification of solar front electrode coating performance, etc.

Method used

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  • Composite transparent conductive oxide film and preparation method thereof
  • Composite transparent conductive oxide film and preparation method thereof
  • Composite transparent conductive oxide film and preparation method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0048] A composite transparent conductive oxide film of the present invention, such as figure 1 As shown, it is set on the substrate 1, the film includes an ITO layer 2 and a ZIO layer 3, the ITO layer 2 is set on the substrate 1, the ZIO layer 3 is set on the ITO layer 2, and the surface structure of the ZIO layer 3 is a suede structure.

[0049] A method for preparing the composite transparent conductive oxide film of the above-mentioned present embodiment, comprising the following steps:

[0050] (1) Preparation of ITO precursor solution: 29.05g indium chloride, 3.23g tin chloride, 1.98g methyl cellulose, 0.63g polyether organosiloxane leveling agent (FL-3), 2.34g poly After vinylpyrrolidone PVP was dissolved in 70mL of water by mechanical dispersion, it was dispersed for 10min under ultrasonic with a working frequency of 20KHz, and then stirred for 10min by a shear emulsification mixer with a speed of 6000r / min to obtain an ITO precursor solution with a pH of 7.3.

[0051...

Embodiment 2

[0058] A composite transparent conductive oxide film of the present invention, such as figure 1 As shown, it is set on the substrate 1, the film includes an ITO layer 2 and a ZIO layer 3, the ITO layer 2 is set on the substrate 1, the ZIO layer 3 is set on the ITO layer 2, and the surface structure of the ZIO layer 3 is a suede structure.

[0059] A method for preparing the composite transparent conductive oxide film of the above-mentioned present embodiment, comprising the following steps:

[0060] (1) Preparation of ITO precursor solution: 37.13g of indium nitrate, 3.62g of tin nitrate, 1.03g of carboxymethyl cellulose, 1.27g of sodium polyacrylate, and 0.68g of hexadecyltrimethylammonium bromide were dissolved in After 60mL of water, disperse for 7min under ultrasonic with a working frequency of 30KHz, and then stir for 8min with a shear emulsification mixer with a rotating speed of 5000r / min to obtain an ITO precursor solution with a pH value of 7.0.

[0061] (2) Preparat...

Embodiment 3

[0068] A composite transparent conductive oxide film of the present invention, such as figure 1 As shown, it is set on the substrate 1, the film includes an ITO layer 2 and a ZIO layer 3, the ITO layer 2 is set on the substrate 1, the ZIO layer 3 is set on the ITO layer 2, and the surface structure of the ZIO layer 3 is a suede structure.

[0069] A method for preparing the composite transparent conductive oxide film of the above-mentioned present embodiment, comprising the following steps:

[0070] (1) Preparation of ITO precursor solution: 43.2g indium nitrate, 4.64 tin chloride, 1.8g carboxypropyl methylcellulose, 1.8g polyacrylamide, 1.8g polyethylene glycol 1000 were dissolved in 70mL by mechanical dispersion After dispersing for 10 minutes under ultrasonic with a working frequency of 20KHz, and then stirring for 20 minutes by a shear emulsification mixer with a rotating speed of 4000r / min, an ITO precursor solution with a pH value of 7.2 was obtained.

[0071] (2) Prepara...

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Abstract

The invention discloses a composite TCO film and a preparation method thereof. The composite TCO film comprises an ITO layer and a ZIO layer, wherein the ITO layer is arranged on a substrate, the ZIO layer is arranged on the ITO layer, and the surface structure of the ZIO layer is a texture structure. The preparation method comprises: (1) preparing an ITO precursory solution; (2) preparing a film coating substrate, and heating and baking the film coating substrate to obtain a substrate with the ITO layer; and (3) preparing a ZIO hydrothermal solution, placing the substrate with the ITO layer in the ZIO hydrothermal solution to perform hydro-thermal reaction to obtain a TCO film. The composite TCO film has the characteristics of higher transmittance, lower resistivity, proper refractive index and thickness, good surface viscosity and surface light tripping effect, stable physical property, low cost preparation method, simple equipment and zero production pollution.

Description

technical field [0001] The invention belongs to the technical field of photovoltaic power generation, and relates to the development and research of an important part of a HIT solar cell or a thin-film silicon solar cell, in particular to a novel transparent conductive oxide film with a composite multilayer structure and a preparation method thereof. Background technique [0002] With the development of photovoltaic power generation technology, especially the industrialization of new solar cells (such as: thin film solar cells, HIT cells, etc.) in recent years, transparent conductive oxide films (TCO), as an indispensable part of new solar cells, have caused great Big attention. [0003] Transparent conductive oxide thin films are an important member of the semiconductor family, and their basic characteristics include: large band gap (>3.0ev), DC resistivity (n-type) up to 10 -5 ~10 -4 Ω·cm, higher transmittance (>80%) in the visible light region, etc. Commonly used...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L31/0224H01L31/18
CPCH01L31/022466H01L31/1884Y02P70/50
Inventor 朱奕漪刘良玉刘文峰
Owner 48TH RES INST OF CHINA ELECTRONICS TECH GROUP CORP
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