Unlock instant, AI-driven research and patent intelligence for your innovation.

transition between siw and waveguide interfaces

A technology of waveguide interface and interface, which is applied in the direction of waveguide, waveguide-type devices, connecting devices, etc., and can solve the problems that no one provides enough bandwidth and robustness

Active Publication Date: 2018-01-26
TELEFON AB LM ERICSSON (PUBL)
View PDF5 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0012] Different types of transitions have been made, but none of them offer sufficient bandwidth, robustness and low loss, and therefore an enhanced transition between SIW and waveguide interfaces is expected

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • transition between siw and waveguide interfaces
  • transition between siw and waveguide interfaces
  • transition between siw and waveguide interfaces

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0038] reference figure 1 with figure 2 The substrate integrated waveguide SIW is a waveguide defined by at least two parallel walls in the dielectric between two conductive layers.

[0039] More specifically, SIW 2 includes a dielectric material 4, a first metal layer 5 and a second metal layer 6, wherein the dielectric material 4 has a layer thickness t d , And located between the first metal layer 5 and the second metal layer 6. The SIW also includes electrical wall element arrangements 7a, 7b, 7c in the form of through holes 21, which penetrate through the dielectric material 4 and electrically connect the metal layers 5, 6. The electrical wall element arrangement includes a first electrical wall element 7a and a second electrical wall element 7b, wherein the first electrical wall element 7a and the second electrical wall element 7b are parallel to each other and extend in the SIW longitudinal direction. s SIW width w s Separate.

[0040] The microwave signal 23 is arranged to...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention relates to a transition arrangement (1) between a SIW and a waveguide interface (3). The SIW comprises a dielectric material (4), first and second metal layers (5, 6) and first and second electric wall elements (7a, 7b) substantially parallel and electrically connecting the metal layers (5, 6). The transition arrangement (1) comprises a coupling hole (8) in the first metal layer (5) and a third wall element (7c) between the first and second electric wall elements (7a, 7b). The transition arrangement (1) further comprises an intermediate transition element (9) having first and second main surfaces (10, 11) and a transition hole (12) having first and second openings (13, 14), the first and The second openings (13, 14) have respective first and second widths (w1, w2). The transition element (9) is mounted on the coupling hole (8), the first width (w1) exceeds the second width (w2), and the transition from the first width (w1) to the second width (w2) is at least one step (15, 16) occurs between the first opening (13) and the second opening (14). The second opening (14) is mounted to the waveguide interface (3), which has an interface opening (17) offset relative to the second opening (14), forming a front end step (18).

Description

Technical field [0001] The invention relates to a transition arrangement adapted to provide a signal transition between the substrate integrated waveguide SIW and the waveguide interface. The SIW includes a dielectric material, a first metal layer, a second metal layer, and an arrangement of electric wall elements, the dielectric material having a layer thickness and located between the first metal layer and the second metal layer. The electrical wall element arrangement includes a first electrical wall element and a second electrical wall element. The first electrical wall element and the second electrical wall element are at least partially parallel to each other, are separated by the SIW width in the longitudinal extension of the SIW, and divide the first metal layer It is electrically connected to the second metal layer. The microwave signal is arranged to propagate along the SIW longitudinal extension within a confinement area defined by at least a first metal layer, a sec...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): H01P3/12H01P5/08
CPCH01P3/121H01P5/082H01P5/08
Inventor P·利甘德O·特格曼V·帕斯库P·桑奇里科O·珀森
Owner TELEFON AB LM ERICSSON (PUBL)