A broadband thin-film photothermal energy conversion device
An energy conversion and thin-film technology, which is applied in heating devices, solar thermal devices, solar thermal power generation, etc., can solve the problems of difficult application and low absorption rate, and achieve the effect of enhancing absorption rate, improving absorption rate, and facilitating popularization and application
Inactive Publication Date: 2017-07-28
FUDAN UNIV
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[0006] The existing patent ZL200610027440.1 adopts a 4-layer film structure, the working wavelength range is limited to 400-1000nm wavelength range, and the average absorption rate is only 90%, especially the absorption rate in the ultraviolet region is very low, so it is difficult to be applied in the ultraviolet region
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[0045] Among the various optional structural parameters, an actual achievable device structural parameter is:
[0046] Layer 1, anti-reflection and protective layer, thickness d=57.3nm, transparent medium SiO 2 layer;
[0047] The second layer, light absorbing layer, thickness d=5.7nm, transition metal Ti layer;
[0048] Layer 3, optical amplitude and phase matching layer, thickness d=67.1nm, transparent medium SiO 2 layer;
[0049] The fourth layer, light absorbing layer, thickness d=11.6nm, transition metal Ti layer;
[0050]Layer 5, optical amplitude and phase matching layer, thickness d=51.4nm, transparent medium SiO 2 layer;
[0051] Layer 6, high reflection layer, thickness d=120nm, metal Cu layer.
[0052] Among them, the dielectric materials of the first layer, the third layer, and the fifth layer can also choose other transparent dielectric materials; the transition metal materials of the second and fourth layers can also choose Ti, W, Cr transition metal materi...
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Abstract
The invention discloses a broadband thin-film photothermal energy conversion device. The first layer is an anti-reflection protective layer, which adopts a transparent dielectric film; the second layer is a light absorption layer, which adopts a transition metal film; the third layer is an optical amplitude and The phase matching layer uses a transparent dielectric film; the fourth layer is a light absorption layer and uses a transition metal film; the fifth layer is an optical amplitude and phase matching layer and uses a transparent dielectric film; the sixth layer is a high reflection layer and uses a completely non-transparent The thickness of the first layer to the sixth layer is selected according to the optical constants of each film layer. In the 250-1200nm wavelength region, the high absorption condition satisfied is: (R+T)≤5%, A X ≥95%,R+T+A X =1. In the 250-1200nm wavelength region, the light absorptivity A of converting photon energy into heat energy can be realized x More than 95%.
Description
technical field [0001] The invention belongs to the technical field of optical and electronic devices, and relates to a broadband thin-film photothermal energy conversion device. Background technique [0002] Multilayer films with nanostructures have important applications in high-tech fields, such as in the field of green solar energy, which can convert solar energy into heat energy by using the spectral characteristics of selective solar light absorbing film structures. At present, in the research of solar energy utilization, most of the attention is focused on the photoelectric energy conversion characteristics of devices, mainly using amorphous, polycrystalline and crystalline semiconductor materials, and using their special energy band structures to realize solar energy. photoelectric conversion process. However, due to the different energy band structures of different semiconductor materials, their absorption and photoelectric conversion properties are difficult to fu...
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IPC IPC(8): B32B15/04F24J2/46
CPCY02E10/40
Inventor 陈良尧姚远胡二涛臧恺岩赵海斌郑玉祥王松有杨月梅
Owner FUDAN UNIV