Ultra-precision Machining Method of Gallium Oxide Substrate

An ultra-precision machining and gallium oxide technology, which is applied in metal processing equipment, manufacturing tools, grinding devices, etc., can solve problems such as cleavage of crystal materials, high cost of consumables, environmental pollution, etc., so as to avoid processing difficulty And the effect of rising processing cost and reducing processing cost

Active Publication Date: 2017-12-22
南京大劲精密机械有限公司
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

There are many areas to be improved in the traditional sapphire processing technology. For example, in the double-sided grinding process, the use of auxiliary materials such as boron carbide grinding fluid and oily diamond grinding fluid will cause considerable environmental pollution, and the pressure on environmental protection is relatively high; tin plate or copper Disk belongs to consumables with high cost
In addition, because sapphire has no cleavage, the traditional process does not take into account the problem of cleavage of the crystal material. It is foreseeable that the processing result of the traditional process directly applied to the gallium oxide crystal will definitely not work.

Method used

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  • Ultra-precision Machining Method of Gallium Oxide Substrate
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Embodiment Construction

[0027] The present invention will be further described below in conjunction with specific embodiments.

[0028] figure 1 It is the process flow chart of traditional sapphire ultra-precision machining, figure 2 It is a process flow chart of the ultra-precision machining method for gallium oxide substrates of the present invention.

[0029] Abrasive particle size classification representation method: particle size number "W", particle size unit "micron"; abrasive particle size increases with the increase in the value after "W", for example, W0.5 means that the abrasive particle size distribution is less than 0.5 micron Within the range, W1.5 means that the abrasive particle size distribution range is between 0.5 and 1.5 microns. In addition, the particle size number can also be expressed by "mesh". The abrasive particle size becomes smaller with the increase of the "mesh" value. There are different standards for screen specifications in different countries and industries, so ...

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Abstract

The invention discloses an ultra-precision machining method for a gallium oxide substrate and belongs to the technical field of machining of an original semiconductor. The ultra-precision machining method includes the following steps that firstly, slicing is conducted, wherein a gallium oxide crystal is sliced, and a gallium oxide crystal substrate blank is obtained; secondly, grinding is conducted; thirdly, polishing is conducted, namely, according to rough polishing, silk is used as a polishing gasket, rough polishing is conducted on the ground gallium oxide crystal substrate, the gallium oxide crystal substrate obtained after rough polishing is obtained, according to finishing polishing, silk is used as a polishing gasket, finishing polishing is conducted on the gallium oxide crystal substrate obtained after rough polishing, the gallium oxide crystal substrate obtained after finishing polishing is obtained, and diamond polishing paste is used as a polishing addition agent; and fourthly, cleaning is conducted. The ultra-precision machining method has the beneficial effects that green machining is conducted, and environment friendliness is achieved since the polishing paste and the silk used in the method belong to green and non-pollution consumables, and pressure cannot be caused to the environment at all; low-cost machining is achieved due to the fact that the consumables used in the method are low-cost materials; and machining steps are simplified.

Description

field of invention [0001] The invention belongs to the technical field of semiconductor original processing, and in particular relates to an ultra-precision processing method for a gallium oxide substrate. Background technique [0002] Gallium oxide (β-Ga 2 o 3 ) is expected to manufacture power semiconductor elements with high withstand voltage and low loss at low cost, and has attracted great attention. In January 2013, several scientific research institutes including the Japan Information and Communication Research Institute jointly developed the world's first gallium oxide transistor, which aroused people's high attention to the research of gallium oxide single crystal. Gallium oxide single crystal growth technology is a research hotspot that has only emerged in recent years. In 2013, Namiki Precision Gem Co., Ltd., Shanghai Institute of Optics and Mechanics, Chinese Academy of Sciences, and Shanghai Institute of Ceramics, Chinese Academy of Sciences, and in 2014, Japa...

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Application Information

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Patent Type & AuthorityPatents(China)
IPC IPC(8): B24B37/04B24B37/10
CPCB24B37/042B24B37/10
Inventor黄传锦周海顾斌刘道标吴进惠学芹徐晓明
Owner南京大劲精密机械有限公司