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High Speed ​​Photodetector

A light detector and energy technology, applied in semiconductor devices, electrical components, circuits, etc., can solve problems that affect the total transit time and are not obvious

Active Publication Date: 2018-04-13
MELLANOX TECHNOLOGIES LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The minority carriers can then diffuse rapidly from the doped absorber layer into the pure layer and thus affect the total transit time less significantly than conventional PIN photodiodes

Method used

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  • High Speed ​​Photodetector
  • High Speed ​​Photodetector
  • High Speed ​​Photodetector

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Embodiment Construction

[0034] Advantageous embodiments of photodetectors constructed in accordance with the invention will now be described in further detail with reference to the accompanying drawings.

[0035] As described below, the term "pure semiconductor" is to be understood within its ordinary meaning in the art as being pure, undoped, and may also include lightly doped semiconductors that are not intentionally doped . The term "doped" will be used to refer to an n-type or p-type doped semiconductor having a doping concentration higher than that of the pure semiconductor, as described below.

[0036] figure 1 A cross-sectional view of a photodetector according to an embodiment of the invention is shown. In the illustrated embodiment, the photodetector 100 is illuminated vertically from the top side, which is the side of the photodetector 100 opposite the substrate 101 . However, other configurations are conceivable in which incident light illuminates the bottom side (ie, the side of the ph...

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PUM

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Abstract

The present invention provides a pin-based high-speed photodetector comprising a thin light-absorbing layer (102) in which the applied electric field is high, the thin light-absorbing layer (102) in contact with a drift layer exposed to a much lower electric field (104) Combination. Only charge carriers with higher mobility will have to travel through the drift layer (104), while charge carriers with lower mobility will only travel a distance less than or at most equal to the thickness of the light absorbing layer (102) superior. The bandgap energy (208) of the drift layer (104) is greater than the bandgap energy (206) of the light absorbing layer (102). The transition from the higher electric field light absorbing layer to the lower electric field drift layer is performed through a graded layer (105). The reduction of the electric field in the drift layer (104) with respect to the electric field of the light absorbing layer (102) is achieved by the distribution of the doping concentrations in the light absorbing layer (102), the drift layer (104) and the graded layer (105).

Description

technical field [0001] The present invention relates to semiconductor-based photodetectors, and more particularly, to structures and methods for fabricating high-speed photodetectors with enhanced velocity response. Background technique [0002] Semiconductor-based photodetectors capable of converting optical signals into detectable electrical signals are widely used in different technical fields such as optical communication networks. That is, photodiodes based on p-i-n junctions (also known as PIN photodiodes) are particularly suitable as high-speed photodetectors due to their fast response to incident light compared to p-n junctions. The traditional p-i-n junction includes p-type semiconductor layer (p layer), n-type semiconductor layer (n layer) and pure type (undoped or lightly doped) semiconductor layer (also called i layer, sandwiched between p layer and between n layers). When a p-i-n junction operates as a photodetector, the p-i-n junction is typically in a revers...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L31/105
CPCH01L31/105H01L31/03042H01L31/03046
Inventor M.G.查辛斯基N.P.奇蒂卡
Owner MELLANOX TECHNOLOGIES LTD