Time Domain Simulation Circuit and Simulation Method of Pin Diode

Abstract

The invention discloses a PIN diode time domain equivalent circuit model. The model comprises four sub-circuits, wherein the first sub-circuit describes an I-layer equivalent circuit and a PN junction equivalent circuit, the second sub-circuit and the third sub-circuit are combined with the PN junction equivalent circuit in the first sub-circuit to describe the relation between PIN diode current and PN junction voltage drop together, and the fourth sub-circuit is combined with the I-layer equivalent circuit in the first sub-circuit to describe the relation between PIN diode current and I-layer voltage drop. The invention further provides a modeling method of the PIN diode time domain equivalent circuit model. The PIN diode time domain transient equivalent circuit model can be established to reflect the peak leakage and recovery time of the charge-storage effect so as to precisely predict the time-domain response characteristics of a PIN diode under the action of various signals, and then a method is provided for predicting the electromagnetic pulse effect of the radio frequency front end of sensitive electronic information equipment.

Description

technical field [0001] The invention belongs to the simulation field of semiconductor devices, and in particular relates to a time-domain simulation circuit and simulation method of a PIN diode. Background technique [0002] When the radio frequency and microwave sensitive electronic information system is exposed to the electromagnetic pulse radiation field, the filter module, limiter module and low noise amplifier module in the receiving channel will be impacted by the electromagnetic pulse energy. According to the current electromagnetic pulse radiation field level, it is necessary to focus on the performance of the limiter module, because the time domain response characteristics (such as start-up time and leakage level) of the limiter module when the electromagnetic pulse is injected determines whether the receiving channel will be damaged or how disturbed it is. In order to predict these effects, reliable simulation models need to be established. The difficulty in the ...

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Problems solved by technology

[0003] The purpose of the present invention is to provide a time-domain simulation circuit and simulation method of a PIN diode, which can solve the problem that the general diode simulation model in the existing circuit-level electromagnetic simulation commercial software cannot simulate the PIN limiter diode in the electromagnetic pulse Problems with transient response characteristics under action

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