Self-aligned contact and method

Abstract

Self-aligned contacts are provided. In an embodiment the self-aligned contacts are formed by partially removing a first dielectric material from adjacent to a gate electrode and fully removing a second dielectric material from adjacent to the gate electrode. A conductive material is deposited into the regions of the removed first dielectric material and the second dielectric material, and the conductive material and metal gates are recessed below a spacer. A dielectric layer is deposited over the recessed conductive material and the recessed metal gates, and the self-aligned contacts are formed through the dielectric layer. The invention also provides a self-aligned contact method.

Description

technical field [0001] The present invention generally relates to the field of semiconductors, and more particularly, to a self-aligned contact in a semiconductor device and a method for forming the same. Background technique [0002] As consumer devices have become smaller in response to consumer demand, so have the dimensions of the various components forming the consumer devices and their connection paths. Semiconductor devices constituting the main components of devices such as mobile phones, tablet computers, etc. have been compressed to become smaller and smaller, while correspondingly targeting various devices (eg, transistors, resistors, capacitors, etc.) inside the semiconductor devices And the compression of their connecting paths (eg, connecting wires) makes their size smaller as well. [0003] One potential problem with this trend to reduce the size of individual devices is the bottleneck in the interconnects that electrically connect the various active devices ...

AI Technical Summary

Problems solved by technology

[0003] A potential problem with this trend to reduce the size of individual devices is the bottleneck in the interconnects that electrically connect the individual active devices within a semiconductor device to each other

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